Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Matthias Widmann, Matthias Niethammer, Dmitry Yu Fedyanin, Igor A. Khramtsov, Torsten Rendler, Ian D. Booker, Jawad Ul Hassan, Naoya Morioka, Yu Chen Chen, Ivan G. Ivanov, Nguyen Tien Son, Takeshi Ohshima, Michel Bockstedte, A. Gali, Cristian Bonato, Sang Yun Lee, Jörg Wrachtrup

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Color centers with long-lived spins are established platforms for quantum sensing and quantum information applications. Color centers exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. In particular, we demonstrate charge state switching through the bias applied to the color center in an integrated silicon carbide optoelectronic device. We show that the electronic environment defined by the doping profile and the distribution of other defects in the device plays a key role for charge state control. Our experimental results and numerical modeling evidence that control of these complex interactions can, under certain conditions, enhance the photon emission rate. These findings open the way for deterministic control over the charge state of spin-active color centers for quantum technology and provide novel techniques for monitoring doping profiles and voltage sensing in microscopic devices.

Original languageEnglish
JournalNano Letters
DOIs
Publication statusAccepted/In press - Jan 1 2019

Fingerprint

Color centers
Silicon
optoelectronic devices
Silicon carbide
silicon carbides
Optoelectronic devices
Vacancies
manipulators
color centers
silicon
Doping (additives)
Optical transitions
profiles
optical transition
Photons
platforms
Defects
silicon carbide
Monitoring
Electric potential

Keywords

  • materials science
  • multidisciplinary
  • nanotechnology
  • semiconductors

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Widmann, M., Niethammer, M., Fedyanin, D. Y., Khramtsov, I. A., Rendler, T., Booker, I. D., ... Wrachtrup, J. (Accepted/In press). Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device. Nano Letters. https://doi.org/10.1021/acs.nanolett.9b02774

Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device. / Widmann, Matthias; Niethammer, Matthias; Fedyanin, Dmitry Yu; Khramtsov, Igor A.; Rendler, Torsten; Booker, Ian D.; Ul Hassan, Jawad; Morioka, Naoya; Chen, Yu Chen; Ivanov, Ivan G.; Son, Nguyen Tien; Ohshima, Takeshi; Bockstedte, Michel; Gali, A.; Bonato, Cristian; Lee, Sang Yun; Wrachtrup, Jörg.

In: Nano Letters, 01.01.2019.

Research output: Contribution to journalArticle

Widmann, M, Niethammer, M, Fedyanin, DY, Khramtsov, IA, Rendler, T, Booker, ID, Ul Hassan, J, Morioka, N, Chen, YC, Ivanov, IG, Son, NT, Ohshima, T, Bockstedte, M, Gali, A, Bonato, C, Lee, SY & Wrachtrup, J 2019, 'Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device', Nano Letters. https://doi.org/10.1021/acs.nanolett.9b02774
Widmann, Matthias ; Niethammer, Matthias ; Fedyanin, Dmitry Yu ; Khramtsov, Igor A. ; Rendler, Torsten ; Booker, Ian D. ; Ul Hassan, Jawad ; Morioka, Naoya ; Chen, Yu Chen ; Ivanov, Ivan G. ; Son, Nguyen Tien ; Ohshima, Takeshi ; Bockstedte, Michel ; Gali, A. ; Bonato, Cristian ; Lee, Sang Yun ; Wrachtrup, Jörg. / Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device. In: Nano Letters. 2019.
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