Electrical characterization of Schottky junctions: Anomalies, parameter extraction and barrier height engineering

Research output: Contribution to journalConference article

14 Citations (Scopus)

Abstract

The main deviations of real Schottky junctions from the ideal ones that yield electrical anomalies, are discussed. The most frequent anomalies and their possible origins are summarized. Evaluation methods suitable for the extraction of junction parameters exhibiting electrical anomalies, are reviewed. The possibilities of barrier height engineering are summarized.

Original languageEnglish
Pages (from-to)1085-1092
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3316
Issue number2
Publication statusPublished - Dec 1 1998
EventProceedings of the 1997 9th International Workshop on the Physics of Semiconductor Devices, IWPSD. Part 1 (of 2) - Delhi, India
Duration: Dec 16 1997Dec 20 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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