Electrical characterization of Schottky junctions

Anomalies, parameter extraction and barrier height engineering

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

The main deviations of real Schottky junctions from the ideal ones that yield electrical anomalies, are discussed. The most frequent anomalies and their possible origins are summarized. Evaluation methods suitable for the extraction of junction parameters exhibiting electrical anomalies, are reviewed. The possibilities of barrier height engineering are summarized.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Pages1085-1092
Number of pages8
Volume3316
Edition2
Publication statusPublished - 1998
EventProceedings of the 1997 9th International Workshop on the Physics of Semiconductor Devices, IWPSD. Part 1 (of 2) - Delhi, India
Duration: Dec 16 1997Dec 20 1997

Other

OtherProceedings of the 1997 9th International Workshop on the Physics of Semiconductor Devices, IWPSD. Part 1 (of 2)
CityDelhi, India
Period12/16/9712/20/97

Fingerprint

Parameter extraction
engineering
anomalies
deviation
evaluation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Horváth, Z. (1998). Electrical characterization of Schottky junctions: Anomalies, parameter extraction and barrier height engineering. In Proceedings of SPIE - The International Society for Optical Engineering (2 ed., Vol. 3316, pp. 1085-1092). SPIE.

Electrical characterization of Schottky junctions : Anomalies, parameter extraction and barrier height engineering. / Horváth, Z.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3316 2. ed. SPIE, 1998. p. 1085-1092.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horváth, Z 1998, Electrical characterization of Schottky junctions: Anomalies, parameter extraction and barrier height engineering. in Proceedings of SPIE - The International Society for Optical Engineering. 2 edn, vol. 3316, SPIE, pp. 1085-1092, Proceedings of the 1997 9th International Workshop on the Physics of Semiconductor Devices, IWPSD. Part 1 (of 2), Delhi, India, 12/16/97.
Horváth Z. Electrical characterization of Schottky junctions: Anomalies, parameter extraction and barrier height engineering. In Proceedings of SPIE - The International Society for Optical Engineering. 2 ed. Vol. 3316. SPIE. 1998. p. 1085-1092
Horváth, Z. / Electrical characterization of Schottky junctions : Anomalies, parameter extraction and barrier height engineering. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3316 2. ed. SPIE, 1998. pp. 1085-1092
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