First-principles calculations carried out in 3C - and 4H-SiC show that small metastable carbon clusters can be created in irradiated SiC. The metastable carbon clusters possess occupation levels in the p -type as well as in the n -type 4H-SiC. Depending on the conditions of irradiation and the annealing temperature new photoluminescence centers might be detected with characteristic local vibrational modes in the spectrum. We provide the occupation levels and the local vibrational modes of the defects to make the identification possible.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - Feb 28 2006|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics