Electrical characterization of Au/SiOx/n-GaAs junctions

J. Ivanèo, Z. Horváth, Vo Van Tuyen, C. Coluzza, J. Almeida, A. Terrasi, B. Pécz, Gy Vincze, G. Margaritondo

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The electrical behavior of Au/SiOx/n-GaAs Schottky structures has been studied using a statistical approach. It has been concluded that the obtained unusual electrical behavior is connected mainly with different Fermi-level pinning position and lateral microinhomogeneities of the barrier height induced by different average thickness of the SiOx interlayer along the wafer. The results of cross-sectional transmission electron microscopy and the temperature dependence of the electrical characteristics confirm this conclusion.

Original languageEnglish
Pages (from-to)229-233
Number of pages5
JournalSolid-State Electronics
Volume42
Issue number2
Publication statusPublished - Mar 16 1998

Fingerprint

Fermi level
Transmission electron microscopy
interlayers
wafers
Temperature
temperature dependence
transmission electron microscopy
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Ivanèo, J., Horváth, Z., Van Tuyen, V., Coluzza, C., Almeida, J., Terrasi, A., ... Margaritondo, G. (1998). Electrical characterization of Au/SiOx/n-GaAs junctions. Solid-State Electronics, 42(2), 229-233.

Electrical characterization of Au/SiOx/n-GaAs junctions. / Ivanèo, J.; Horváth, Z.; Van Tuyen, Vo; Coluzza, C.; Almeida, J.; Terrasi, A.; Pécz, B.; Vincze, Gy; Margaritondo, G.

In: Solid-State Electronics, Vol. 42, No. 2, 16.03.1998, p. 229-233.

Research output: Contribution to journalArticle

Ivanèo, J, Horváth, Z, Van Tuyen, V, Coluzza, C, Almeida, J, Terrasi, A, Pécz, B, Vincze, G & Margaritondo, G 1998, 'Electrical characterization of Au/SiOx/n-GaAs junctions', Solid-State Electronics, vol. 42, no. 2, pp. 229-233.
Ivanèo J, Horváth Z, Van Tuyen V, Coluzza C, Almeida J, Terrasi A et al. Electrical characterization of Au/SiOx/n-GaAs junctions. Solid-State Electronics. 1998 Mar 16;42(2):229-233.
Ivanèo, J. ; Horváth, Z. ; Van Tuyen, Vo ; Coluzza, C. ; Almeida, J. ; Terrasi, A. ; Pécz, B. ; Vincze, Gy ; Margaritondo, G. / Electrical characterization of Au/SiOx/n-GaAs junctions. In: Solid-State Electronics. 1998 ; Vol. 42, No. 2. pp. 229-233.
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