Electrical characteristics and the energy band diagram of the isotype n-Si1 -XGex/n-Si heterojunction in relaxed structures

L. K. Orlov, Zs J. Horváth, A. V. Potapov, M. L. Orlov, S. V. Ivin, V. I. Vdovin, E. A. Steinman, V. M. Fomin

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Abstract

The electrical characteristics of the relaxed isotype n-Si 1 -xGex/n-Si heterojunction are studied for the case of a misfit-dislocation network formed in the vicinity of the heterointerface. The data obtained are used to analyze the energy bands of the heterostructure. The band structure of the crystal near the interface is shown to be formed by a charge at lattice defects. The potential-barrier parameters are estimated by analyzing the temperature dependences of the J-U and C-U characteristics of the system.

Original languageEnglish
Pages (from-to)2139-2145
Number of pages7
JournalPhysics of the Solid State
Volume46
Issue number11
DOIs
Publication statusPublished - Dec 1 2004

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Orlov, L. K., Horváth, Z. J., Potapov, A. V., Orlov, M. L., Ivin, S. V., Vdovin, V. I., Steinman, E. A., & Fomin, V. M. (2004). Electrical characteristics and the energy band diagram of the isotype n-Si1 -XGex/n-Si heterojunction in relaxed structures. Physics of the Solid State, 46(11), 2139-2145. https://doi.org/10.1134/1.1825562