Electrical characterisation of Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation

Zs J. Horváth, M. Ádám, Cs Dücsö, I. Pintér, Vo Van Tuyen, I. Bársony, E. Gombia, R. Mosca, Z. S. Makaró

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Abstract

Current-voltage and capacitance-voltage measurements on Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation of H+ and P+ ions have been performed in the temperature range of 80-360 K. Schottky barrier heights up to 0.79 V have been obtained which value is among the highest ones reported for p-Si so far. The unusual electrical properties are discussed in terms of full depletion approximation, lateral inhomogeneity of barrier height, Fermi-level pinning and band gap broadening due to hydrogenation. An overview of electrical behaviour of metal/n/p Schottky junctions is presented.

Original languageEnglish
Pages (from-to)221-228
Number of pages8
JournalSolid-State Electronics
Volume42
Issue number2
DOIs
Publication statusPublished - Mar 16 1998

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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