Electrical characterisation of Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation

Z. Horváth, M. Ádám, C. Dücső, I. Pintér, Vo Van Tuyen, I. Bársony, E. Gombia, R. Mosca, Z. S. Makaró

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Current-voltage and capacitance-voltage measurements on Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation of H+ and P+ ions have been performed in the temperature range of 80-360 K. Schottky barrier heights up to 0.79 V have been obtained which value is among the highest ones reported for p-Si so far. The unusual electrical properties are discussed in terms of full depletion approximation, lateral inhomogeneity of barrier height, Fermi-level pinning and band gap broadening due to hydrogenation. An overview of electrical behaviour of metal/n/p Schottky junctions is presented.

Original languageEnglish
Pages (from-to)221-228
Number of pages8
JournalSolid-State Electronics
Volume42
Issue number2
Publication statusPublished - Mar 16 1998

Fingerprint

Capacitance measurement
Voltage measurement
Fermi level
Ion implantation
submerging
Hydrogenation
implantation
Electric properties
Energy gap
Metals
Ions
Plasmas
Electric potential
electrical measurement
hydrogenation
depletion
inhomogeneity
capacitance
electrical properties
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Electrical characterisation of Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation. / Horváth, Z.; Ádám, M.; Dücső, C.; Pintér, I.; Van Tuyen, Vo; Bársony, I.; Gombia, E.; Mosca, R.; Makaró, Z. S.

In: Solid-State Electronics, Vol. 42, No. 2, 16.03.1998, p. 221-228.

Research output: Contribution to journalArticle

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AU - Van Tuyen, Vo

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AU - Makaró, Z. S.

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