The current-voltage and capacitance-voltage behaviour of amorphous SiGe layers sputtered onto p-type Si substrates, have been studied in the temperature range of 80-320 K by using Al Schottky contacts as test structures. Although a significant influence of the preparation conditions was obtained on the electrical behaviour of the structures, they exhibited similar specific features of the electrical characteristics. These features are mainly due to deep energy states which are present in the sputtered layers and at the amorphous/crystalline interface.
|Number of pages||5|
|Journal||Acta Physica Slovaca|
|Publication status||Published - Dec 1 2005|
ASJC Scopus subject areas
- Physics and Astronomy(all)