Electrical behaviour of ion-mixed Au/n-GaAs contacts

Zs J. Horváth, B. Pécz, E. Jároli, M. Németh-Sallay

Research output: Contribution to journalArticle


The effect of Ar+ (400 keV) and Xe++ (700 keV) bombardment and consecutive annealing (250-525 °C for 10 min in forming gas) on the electrical behaviour of n-type Au/GaAs Schottky junctions are studied. The obtained anomalous I-V and C-V characteristics are treated in comparison with the formation of crystal defects, the growth of different grains and the phase transitions observed by cross-sectional transmission electron microscopy.

Original languageEnglish
Pages (from-to)65-71
Number of pages7
JournalActa Physica Hungarica
Issue number1-2
Publication statusPublished - Mar 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Electrical behaviour of ion-mixed Au/n-GaAs contacts'. Together they form a unique fingerprint.

  • Cite this