Electrical behaviour of ion-mixed Au/n-GaAs contacts

Z. Horváth, B. Pécz, E. Jároli, M. Németh-Sallay

Research output: Contribution to journalArticle

Abstract

The effect of Ar+ (400 keV) and Xe++ (700 keV) bombardment and consecutive annealing (250-525 °C for 10 min in forming gas) on the electrical behaviour of n-type Au/GaAs Schottky junctions are studied. The obtained anomalous I-V and C-V characteristics are treated in comparison with the formation of crystal defects, the growth of different grains and the phase transitions observed by cross-sectional transmission electron microscopy.

Original languageEnglish
Pages (from-to)65-71
Number of pages7
JournalActa Physica Hungarica
Volume74
Issue number1-2
DOIs
Publication statusPublished - Mar 1994

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crystal defects
bombardment
transmission electron microscopy
annealing
gases
ions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electrical behaviour of ion-mixed Au/n-GaAs contacts. / Horváth, Z.; Pécz, B.; Jároli, E.; Németh-Sallay, M.

In: Acta Physica Hungarica, Vol. 74, No. 1-2, 03.1994, p. 65-71.

Research output: Contribution to journalArticle

Horváth, Z. ; Pécz, B. ; Jároli, E. ; Németh-Sallay, M. / Electrical behaviour of ion-mixed Au/n-GaAs contacts. In: Acta Physica Hungarica. 1994 ; Vol. 74, No. 1-2. pp. 65-71.
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