Electrical behaviour of epitaxial Al/n-Al0.25Ga0.75As junctions: effect of the composition of undoped AlxGa1 - xAs cap layer

Z. Horváth, A. Bosacchi, S. Franchi, E. Gombia, R. Mosca, D. Biondelli

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A method is presented for the evaluation of the Schottky barrier height φb0, the Richardson constant A*, the characteristic energy E00, and the bias dependence of the barrier height β from the temperature dependent current-voltage characteristics of Schottky junctions by using the thermionic-field emission (TFE) theory. This method is applied to experimental results measured in epitaxial Al/undoped AlxGa1 - xAs/n-Al0.25Ga0.75As junctions, and it is found that the current flow through these junctions is dominated by the TFE with anomalously high E00. It is concluded that this anomaly may be partly connected with the electric field enhancement at the periphery of the diodes, and with the multistep tunnelling through deep levels and/or DX centres.

Original languageEnglish
Pages (from-to)959-961
Number of pages3
JournalVacuum
Volume46
Issue number8-10
DOIs
Publication statusPublished - 1995

Fingerprint

Thermionic emission
caps
Field emission
thermionic emission
field emission
Current voltage characteristics
Chemical analysis
Diodes
Electric fields
diodes
anomalies
electric fields
augmentation
evaluation
electric potential
Temperature
temperature
energy

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Electrical behaviour of epitaxial Al/n-Al0.25Ga0.75As junctions : effect of the composition of undoped AlxGa1 - xAs cap layer. / Horváth, Z.; Bosacchi, A.; Franchi, S.; Gombia, E.; Mosca, R.; Biondelli, D.

In: Vacuum, Vol. 46, No. 8-10, 1995, p. 959-961.

Research output: Contribution to journalArticle

@article{46fe58be348345c5b339f86033eb14e8,
title = "Electrical behaviour of epitaxial Al/n-Al0.25Ga0.75As junctions: effect of the composition of undoped AlxGa1 - xAs cap layer",
abstract = "A method is presented for the evaluation of the Schottky barrier height φb0, the Richardson constant A*, the characteristic energy E00, and the bias dependence of the barrier height β from the temperature dependent current-voltage characteristics of Schottky junctions by using the thermionic-field emission (TFE) theory. This method is applied to experimental results measured in epitaxial Al/undoped AlxGa1 - xAs/n-Al0.25Ga0.75As junctions, and it is found that the current flow through these junctions is dominated by the TFE with anomalously high E00. It is concluded that this anomaly may be partly connected with the electric field enhancement at the periphery of the diodes, and with the multistep tunnelling through deep levels and/or DX centres.",
author = "Z. Horv{\'a}th and A. Bosacchi and S. Franchi and E. Gombia and R. Mosca and D. Biondelli",
year = "1995",
doi = "10.1016/0042-207X(95)00082-8",
language = "English",
volume = "46",
pages = "959--961",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "8-10",

}

TY - JOUR

T1 - Electrical behaviour of epitaxial Al/n-Al0.25Ga0.75As junctions

T2 - effect of the composition of undoped AlxGa1 - xAs cap layer

AU - Horváth, Z.

AU - Bosacchi, A.

AU - Franchi, S.

AU - Gombia, E.

AU - Mosca, R.

AU - Biondelli, D.

PY - 1995

Y1 - 1995

N2 - A method is presented for the evaluation of the Schottky barrier height φb0, the Richardson constant A*, the characteristic energy E00, and the bias dependence of the barrier height β from the temperature dependent current-voltage characteristics of Schottky junctions by using the thermionic-field emission (TFE) theory. This method is applied to experimental results measured in epitaxial Al/undoped AlxGa1 - xAs/n-Al0.25Ga0.75As junctions, and it is found that the current flow through these junctions is dominated by the TFE with anomalously high E00. It is concluded that this anomaly may be partly connected with the electric field enhancement at the periphery of the diodes, and with the multistep tunnelling through deep levels and/or DX centres.

AB - A method is presented for the evaluation of the Schottky barrier height φb0, the Richardson constant A*, the characteristic energy E00, and the bias dependence of the barrier height β from the temperature dependent current-voltage characteristics of Schottky junctions by using the thermionic-field emission (TFE) theory. This method is applied to experimental results measured in epitaxial Al/undoped AlxGa1 - xAs/n-Al0.25Ga0.75As junctions, and it is found that the current flow through these junctions is dominated by the TFE with anomalously high E00. It is concluded that this anomaly may be partly connected with the electric field enhancement at the periphery of the diodes, and with the multistep tunnelling through deep levels and/or DX centres.

UR - http://www.scopus.com/inward/record.url?scp=0029359125&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029359125&partnerID=8YFLogxK

U2 - 10.1016/0042-207X(95)00082-8

DO - 10.1016/0042-207X(95)00082-8

M3 - Article

AN - SCOPUS:0029359125

VL - 46

SP - 959

EP - 961

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 8-10

ER -