Electrical behaviour of Au/lnGaAsSb and Au/GaSb Junctions

Zs J. Horváth, V. Rakovics, B. Pödör

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Au contacts have been prepared to In0.12Ga0.88As 0.11Sb0.89/GaSb.-Te and to In0.12Ga 0.88As0.11Sb0.89/GaSb.-Te epitaxial structures. For the IncuGaQ.ssAso.jjSbo.sg/GaSb.-Te structure Au yielded relatively good Schottky contact, but the current-voltage characteristics exhibited two regions at low temperatures due to two competing parallel pathes with different apparent barrier heights, ideality factors, and series resistances. Au on GaSb: Ge/GaSb:Te epitaxial structures resulted in very good ohmic contact.

Original languageEnglish
Title of host publicationASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems
Pages119-122
Number of pages4
DOIs
Publication statusPublished - Dec 1 2008
Event7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008 - Smolenice, Slovakia
Duration: Oct 12 2008Oct 16 2008

Publication series

NameASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems

Other

Other7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008
CountrySlovakia
CitySmolenice
Period10/12/0810/16/08

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Horváth, Z. J., Rakovics, V., & Pödör, B. (2008). Electrical behaviour of Au/lnGaAsSb and Au/GaSb Junctions. In ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems (pp. 119-122). [4743295] (ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems). https://doi.org/10.1109/ASDAM.2008.4743295