Electrical behaviour of Al/SiGe/Si heterostructures: Effect of surface treatment and dislocations

Zs J. Horváth, M. Ádám, I. Szabó, L. K. Orlov, A. V. Potapov, V. A. Tolomasov

Research output: Contribution to journalConference article

9 Citations (Scopus)


The effect of HF and H 2 SO 4 + H 2 O 2 treatments on the electrical behaviour on Al/n-SiGe junctions prepared by MBE on n-Si substrates were studied. Barrier heights of 0.73 ± 0.03eV and 0.46 ± 0.04eV, respectively, were obtained. Misfit dislocations located at the SiGe/Si interface yielded different anomalies of the electrical behaviour, as excess currents, instabilities, and anomalous temperature dependence of electrical characteristics and evaluated parameters. It is shown that in spite of anomalies, the electrical measurements can provide useful and reliable information about the structures.

Original languageEnglish
Pages (from-to)54-59
Number of pages6
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - Jul 15 2004
EventThe Ninth International Conference on the Formation of Semicon - Madrid, Spain
Duration: Sep 15 2003Sep 19 2003



  • Dislocations
  • Electrical behaviour
  • Heterostructures
  • Schottky
  • SiGe
  • Surface treatment

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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