Electrical and structural characterisation of Ni/Ge/n-GaAs interface

L. David, B. Kovács, I. Mojzes, B. Pécz, J. Lábár, L. Dobos

Research output: Contribution to journalArticle

Abstract

The structural and electrical behaviour of Ni/Ge layers deposited onto n-type GaAs by electron beam evaporation were studied. The samples have been annealed for 20 min at different temperatures in flowing forming gas - H2:N2 (5%:95%) - in a tube furnace. When the annealing temperature was increased the Schottky barrier heights calculated from I-V and C-V characteristics decreased, and the I-V characteristics of the samples heat treated at 600°C became linear. The contact resistance of the samples with linear characteristic was measured with Cox method. The calculated specific resistivity was 4.4 × 10-4 ohmcm2 in the case of sample heat treated at 550°C and 5.1 × 10 5 ohmcm2 after annealing at 600°C. In the sample annealed at 550°C protrusions appeared with the size of 20-30 nm at the interface of semiconductor-metal. Detectable amount of Ge was found in addition to Ni, As, and G in the protrusions. Moreover, those features contain significantly less Ga than As. The protrusions containing Ge play a role in the formation of the low barrier contact.

Original languageEnglish
Pages (from-to)395-398
Number of pages4
JournalVacuum
Volume50
Issue number3-4
Publication statusPublished - Jul 1 1998

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Annealing
Contact resistance
Electron beams
Evaporation
Furnaces
Gases
Metals
Semiconductor materials
Temperature
heat
annealing
contact resistance
furnaces
Hot Temperature
gallium arsenide
evaporation
electron beams
tubes
electrical resistivity
temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Electrical and structural characterisation of Ni/Ge/n-GaAs interface. / David, L.; Kovács, B.; Mojzes, I.; Pécz, B.; Lábár, J.; Dobos, L.

In: Vacuum, Vol. 50, No. 3-4, 01.07.1998, p. 395-398.

Research output: Contribution to journalArticle

David, L, Kovács, B, Mojzes, I, Pécz, B, Lábár, J & Dobos, L 1998, 'Electrical and structural characterisation of Ni/Ge/n-GaAs interface', Vacuum, vol. 50, no. 3-4, pp. 395-398.
David, L. ; Kovács, B. ; Mojzes, I. ; Pécz, B. ; Lábár, J. ; Dobos, L. / Electrical and structural characterisation of Ni/Ge/n-GaAs interface. In: Vacuum. 1998 ; Vol. 50, No. 3-4. pp. 395-398.
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