Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy

A. Bosacchi, S. Franchi, P. Allegri, V. Avanzini, A. Baraldi, C. Ghezzi, R. Magnanini, A. Parisini, L. Tarricone

Research output: Contribution to journalArticle

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Abstract

High-quality, unintentionally doped GaSb layers were grown by molecular beam epitaxy (MBE) and by atomic layer MBE (ALMBE) to study the influence of growth conditions on their transport and photoluminescence properties. While the hole mobility μ is only slightly dependent on the growth conditions, the 77 K hole concentration p shows minima at growth temperatures of approx. 450°C and for Sb4/Ga beam equivalent pressure ratios (BEPRs) of approx.8; the concentrations of singly and of doubly ionizable acceptors and of a compensating donor have been obtained by simultaneously fitting the temperature dependence of μ and p in the 40-300 K range; from these results we show that the existence of minima of p can be related to an increased electrical compensation due to a reduced incorporation of acceptors. The 15 K photoluminescence spectra are generally dominated by the donor-acceptor pair transition (A, 779 meV) involving the neutral state of the native acceptor, except when the growth is carried out at relatively low temperatures with low BEPRs. Under the latter conditions: (i) a peak (788 meV) shows at an energy 25 meV below the band-gap energy and (ii) exciton related transitions have intensities comparable to that of the A recombination.

Original languageEnglish
Pages (from-to)844-848
Number of pages5
JournalJournal of Crystal Growth
Volume150
Issue number1 -4 pt 2
Publication statusPublished - May 1 1995

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Atomic layer epitaxy
atomic layer epitaxy
Molecular beam epitaxy
Photoluminescence
molecular beam epitaxy
electrical properties
photoluminescence
pressure ratio
Hole concentration
Hole mobility
Growth temperature
Electron transitions
Excitons
hole mobility
Energy gap
Temperature
transport properties
excitons
temperature dependence
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Bosacchi, A., Franchi, S., Allegri, P., Avanzini, V., Baraldi, A., Ghezzi, C., ... Tarricone, L. (1995). Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy. Journal of Crystal Growth, 150(1 -4 pt 2), 844-848.

Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy. / Bosacchi, A.; Franchi, S.; Allegri, P.; Avanzini, V.; Baraldi, A.; Ghezzi, C.; Magnanini, R.; Parisini, A.; Tarricone, L.

In: Journal of Crystal Growth, Vol. 150, No. 1 -4 pt 2, 01.05.1995, p. 844-848.

Research output: Contribution to journalArticle

Bosacchi, A, Franchi, S, Allegri, P, Avanzini, V, Baraldi, A, Ghezzi, C, Magnanini, R, Parisini, A & Tarricone, L 1995, 'Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy', Journal of Crystal Growth, vol. 150, no. 1 -4 pt 2, pp. 844-848.
Bosacchi, A. ; Franchi, S. ; Allegri, P. ; Avanzini, V. ; Baraldi, A. ; Ghezzi, C. ; Magnanini, R. ; Parisini, A. ; Tarricone, L. / Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy. In: Journal of Crystal Growth. 1995 ; Vol. 150, No. 1 -4 pt 2. pp. 844-848.
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