Electrical and photoelectrical behaviour of CdTe structures

Zs J. Horváth, V. P. Makhniy, M. V. Demych, Vo Van Tuyen, J. Balázs, I. Réti, P. M. Gorley, K. S. Ulyanitsky, P. P. Horley, D. Stifter, H. Sitter, L. Dózsa

Research output: Contribution to journalArticle

Abstract

The electrical and photoelectrical behaviour of Au/n-CdTe junctions prepared on CdTe monocrystalline substrates and CdTe epitaxial layers grown on n+ GaAs substrates were studied. The electrical and photoresponse properties depended very strongly on the parameters of the compensated high-resistive layer at the CdTe surface formed by annealing during preparation.

Original languageEnglish
Pages (from-to)156-159
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume80
Issue number1-3
DOIs
Publication statusPublished - Mar 22 2001

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Keywords

  • CdTe
  • Electrical characteristics
  • Photoresponse
  • Schottky barriers
  • Spectral responsivity

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Horváth, Z. J., Makhniy, V. P., Demych, M. V., Van Tuyen, V., Balázs, J., Réti, I., Gorley, P. M., Ulyanitsky, K. S., Horley, P. P., Stifter, D., Sitter, H., & Dózsa, L. (2001). Electrical and photoelectrical behaviour of CdTe structures. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 80(1-3), 156-159. https://doi.org/10.1016/S0921-5107(00)00608-5