Electrical and photoelectrical behaviour of Au/n-CdTe junctions

Z. Horváth, V. P. Makhniy, I. Réti, M. V. Demych, V. Van Tuyen, P. M. Gorley, J. Balázs, K. S. Ulyanitsky, L. Dózsa, P. P. Horley, B. Põdör

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A study of the photoelectrical and electrical behaviour of Au/n-CdTe junctions prepared on CdTe monocrystalline substrates was presented. The resuts showed dependancy of both properties on parameters of compensated high resistive layer at the CdTe surface formed by annealing in air during preparation. The photoresponse behaviour was found to be correlated with the quality factor and depletion depth of the diodes.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsJ. Rutkowski, J. wenus, L. Kubiak
Pages258-261
Number of pages4
Volume4413
DOIs
Publication statusPublished - 2001
EventInterantional Conference on Solid State Crystals 2000 Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology - Zakopane, Poland
Duration: Oct 9 2000Oct 13 2000

Other

OtherInterantional Conference on Solid State Crystals 2000 Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
CountryPoland
CityZakopane
Period10/9/0010/13/00

Fingerprint

Diodes
Annealing
Substrates
Air
Q factors
depletion
diodes
preparation
annealing
air

Keywords

  • C-V
  • CdTe
  • I-V
  • Photoresponse
  • Schottky

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Horváth, Z., Makhniy, V. P., Réti, I., Demych, M. V., Van Tuyen, V., Gorley, P. M., ... Põdör, B. (2001). Electrical and photoelectrical behaviour of Au/n-CdTe junctions. In J. Rutkowski, J. wenus, & L. Kubiak (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4413, pp. 258-261) https://doi.org/10.1117/12.425442

Electrical and photoelectrical behaviour of Au/n-CdTe junctions. / Horváth, Z.; Makhniy, V. P.; Réti, I.; Demych, M. V.; Van Tuyen, V.; Gorley, P. M.; Balázs, J.; Ulyanitsky, K. S.; Dózsa, L.; Horley, P. P.; Põdör, B.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / J. Rutkowski; J. wenus; L. Kubiak. Vol. 4413 2001. p. 258-261.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horváth, Z, Makhniy, VP, Réti, I, Demych, MV, Van Tuyen, V, Gorley, PM, Balázs, J, Ulyanitsky, KS, Dózsa, L, Horley, PP & Põdör, B 2001, Electrical and photoelectrical behaviour of Au/n-CdTe junctions. in J Rutkowski, J wenus & L Kubiak (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 4413, pp. 258-261, Interantional Conference on Solid State Crystals 2000 Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, Zakopane, Poland, 10/9/00. https://doi.org/10.1117/12.425442
Horváth Z, Makhniy VP, Réti I, Demych MV, Van Tuyen V, Gorley PM et al. Electrical and photoelectrical behaviour of Au/n-CdTe junctions. In Rutkowski J, wenus J, Kubiak L, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4413. 2001. p. 258-261 https://doi.org/10.1117/12.425442
Horváth, Z. ; Makhniy, V. P. ; Réti, I. ; Demych, M. V. ; Van Tuyen, V. ; Gorley, P. M. ; Balázs, J. ; Ulyanitsky, K. S. ; Dózsa, L. ; Horley, P. P. ; Põdör, B. / Electrical and photoelectrical behaviour of Au/n-CdTe junctions. Proceedings of SPIE - The International Society for Optical Engineering. editor / J. Rutkowski ; J. wenus ; L. Kubiak. Vol. 4413 2001. pp. 258-261
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