Electrical and photoelectrical behaviour of Au/n-CdTe junctions

Zs J. Horváth, V. P. Makhniy, I. Réti, M. V. Demych, Vo Van Tuyen, P. M. Gorley, J. Balázs, K. S. Ulyanitsky, L. Dózsa, P. P. Horley, B. Põdör

Research output: Contribution to journalArticle

Abstract

A study of the photoelectrical and electrical behaviour of Au/n-CdTe junctions prepared on CdTe monocrystalline substrates was presented. The resuts showed dependancy of both properties on parameters of compensated high resistive layer at the CdTe surface formed by annealing in air during preparation. The photoresponse behaviour was found to be correlated with the quality factor and depletion depth of the diodes.

Original languageEnglish
Pages (from-to)258-261
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4413
DOIs
Publication statusPublished - Jan 1 2001

Keywords

  • C-V
  • CdTe
  • I-V
  • Photoresponse
  • Schottky

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Horváth, Z. J., Makhniy, V. P., Réti, I., Demych, M. V., Van Tuyen, V., Gorley, P. M., Balázs, J., Ulyanitsky, K. S., Dózsa, L., Horley, P. P., & Põdör, B. (2001). Electrical and photoelectrical behaviour of Au/n-CdTe junctions. Proceedings of SPIE - The International Society for Optical Engineering, 4413, 258-261. https://doi.org/10.1117/12.425442