Electrical and optical properties of In-doped CdTe after Cd-rich annealing

E. Belas, R. Grill, A. L. Toth, J. Franc, P. Moravec, P. Horodysky, P. Höschl, T. Wiehert, H. Wolf

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The electrical and optical properties of the conductive n-type surface layer created in high resistivity CdTe:In by annealing at 400-600°C under Cd-rich overpressure was investigated. Slightly compensated donor level with concentration ND∼1.3×1016cm-3 and ionization energy ED∼10meV was obtained front the Hall effect measurement and the electron mobility reaches a maximum of 1×10 4cm2/Vs at 35K after annealing at 600°C. Purification of the n-type layer was confirmed by photoluminescence measurement, where decreasing of the emission lines related to alkali and silver acceptors were observed. The emission line at 1.854 eV, which is expected to characterize high resistivity material, was detected in as grown high resistivity samples as well as in the conductive n-type surface layer.

Original languageEnglish
Pages (from-to)4466-4469
Number of pages4
JournalIEEE Nuclear Science Symposium Conference Record
Volume7
Publication statusPublished - Dec 1 2004
Event2004 Nuclear Science Symposium, Medical Imaging Conference, Symposium on Nuclear Power Systems and the 14th International Workshop on Room Temperature Semiconductor X- and Gamma- Ray Detectors - Rome, Italy
Duration: Oct 16 2004Oct 22 2004

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Radiology Nuclear Medicine and imaging

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    Belas, E., Grill, R., Toth, A. L., Franc, J., Moravec, P., Horodysky, P., Höschl, P., Wiehert, T., & Wolf, H. (2004). Electrical and optical properties of In-doped CdTe after Cd-rich annealing. IEEE Nuclear Science Symposium Conference Record, 7, 4466-4469.