Electrical and optical properties of in-doped CdTe after Cd-rich annealing

E. Belas, R. Grill, A. Tóth, P. Moravec, P. Horodyský, J. Franc, P. Höschl, H. Wolf, Th Wichert

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Electrical and optical properties of the conductive n-type skin layer prepared in high-resistivity CdTe:In by annealing at 400-600°C under Cd-rich overpressure were investigated. Slightly compensated donor level with the concentration ND ≈ 1-3 × 1016 cm-3 and ionization energy ED ≈ 10 meV was evaluated from the Hall effect measurement. The electron mobility reached a maximum of 1 × 104 cm 2/Vs at 35 K after annealing at 600°C. Purification of the n-type layer was found out by photoluminescence measurement, where a reduction of the intensities of the emission lines related to alkali and silver acceptors was observed. The emission line at 1.584 eV, which is usually expected to characterize high-resistivity material, was detected in as-grown high-resistivity samples as well as in the conductive n-type layer.

Original languageEnglish
Pages (from-to)1932-1936
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume52
Issue number5 III
DOIs
Publication statusPublished - Oct 2005

Fingerprint

Electric properties
Optical properties
electrical properties
Annealing
optical properties
electrical resistivity
annealing
Ionization potential
Electron mobility
Hall effect
Purification
Skin
Photoluminescence
Silver
overpressure
electron mobility
purification
alkalies
silver
photoluminescence

Keywords

  • Annealing
  • CdTe
  • Photoluminescence
  • Type con-version

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Belas, E., Grill, R., Tóth, A., Moravec, P., Horodyský, P., Franc, J., ... Wichert, T. (2005). Electrical and optical properties of in-doped CdTe after Cd-rich annealing. IEEE Transactions on Nuclear Science, 52(5 III), 1932-1936. https://doi.org/10.1109/TNS.2005.856874

Electrical and optical properties of in-doped CdTe after Cd-rich annealing. / Belas, E.; Grill, R.; Tóth, A.; Moravec, P.; Horodyský, P.; Franc, J.; Höschl, P.; Wolf, H.; Wichert, Th.

In: IEEE Transactions on Nuclear Science, Vol. 52, No. 5 III, 10.2005, p. 1932-1936.

Research output: Contribution to journalArticle

Belas, E, Grill, R, Tóth, A, Moravec, P, Horodyský, P, Franc, J, Höschl, P, Wolf, H & Wichert, T 2005, 'Electrical and optical properties of in-doped CdTe after Cd-rich annealing', IEEE Transactions on Nuclear Science, vol. 52, no. 5 III, pp. 1932-1936. https://doi.org/10.1109/TNS.2005.856874
Belas, E. ; Grill, R. ; Tóth, A. ; Moravec, P. ; Horodyský, P. ; Franc, J. ; Höschl, P. ; Wolf, H. ; Wichert, Th. / Electrical and optical properties of in-doped CdTe after Cd-rich annealing. In: IEEE Transactions on Nuclear Science. 2005 ; Vol. 52, No. 5 III. pp. 1932-1936.
@article{823f7cab884e41d8b6989b6d50378a95,
title = "Electrical and optical properties of in-doped CdTe after Cd-rich annealing",
abstract = "Electrical and optical properties of the conductive n-type skin layer prepared in high-resistivity CdTe:In by annealing at 400-600°C under Cd-rich overpressure were investigated. Slightly compensated donor level with the concentration ND ≈ 1-3 × 1016 cm-3 and ionization energy ED ≈ 10 meV was evaluated from the Hall effect measurement. The electron mobility reached a maximum of 1 × 104 cm 2/Vs at 35 K after annealing at 600°C. Purification of the n-type layer was found out by photoluminescence measurement, where a reduction of the intensities of the emission lines related to alkali and silver acceptors was observed. The emission line at 1.584 eV, which is usually expected to characterize high-resistivity material, was detected in as-grown high-resistivity samples as well as in the conductive n-type layer.",
keywords = "Annealing, CdTe, Photoluminescence, Type con-version",
author = "E. Belas and R. Grill and A. T{\'o}th and P. Moravec and P. Horodysk{\'y} and J. Franc and P. H{\"o}schl and H. Wolf and Th Wichert",
year = "2005",
month = "10",
doi = "10.1109/TNS.2005.856874",
language = "English",
volume = "52",
pages = "1932--1936",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5 III",

}

TY - JOUR

T1 - Electrical and optical properties of in-doped CdTe after Cd-rich annealing

AU - Belas, E.

AU - Grill, R.

AU - Tóth, A.

AU - Moravec, P.

AU - Horodyský, P.

AU - Franc, J.

AU - Höschl, P.

AU - Wolf, H.

AU - Wichert, Th

PY - 2005/10

Y1 - 2005/10

N2 - Electrical and optical properties of the conductive n-type skin layer prepared in high-resistivity CdTe:In by annealing at 400-600°C under Cd-rich overpressure were investigated. Slightly compensated donor level with the concentration ND ≈ 1-3 × 1016 cm-3 and ionization energy ED ≈ 10 meV was evaluated from the Hall effect measurement. The electron mobility reached a maximum of 1 × 104 cm 2/Vs at 35 K after annealing at 600°C. Purification of the n-type layer was found out by photoluminescence measurement, where a reduction of the intensities of the emission lines related to alkali and silver acceptors was observed. The emission line at 1.584 eV, which is usually expected to characterize high-resistivity material, was detected in as-grown high-resistivity samples as well as in the conductive n-type layer.

AB - Electrical and optical properties of the conductive n-type skin layer prepared in high-resistivity CdTe:In by annealing at 400-600°C under Cd-rich overpressure were investigated. Slightly compensated donor level with the concentration ND ≈ 1-3 × 1016 cm-3 and ionization energy ED ≈ 10 meV was evaluated from the Hall effect measurement. The electron mobility reached a maximum of 1 × 104 cm 2/Vs at 35 K after annealing at 600°C. Purification of the n-type layer was found out by photoluminescence measurement, where a reduction of the intensities of the emission lines related to alkali and silver acceptors was observed. The emission line at 1.584 eV, which is usually expected to characterize high-resistivity material, was detected in as-grown high-resistivity samples as well as in the conductive n-type layer.

KW - Annealing

KW - CdTe

KW - Photoluminescence

KW - Type con-version

UR - http://www.scopus.com/inward/record.url?scp=29244489577&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=29244489577&partnerID=8YFLogxK

U2 - 10.1109/TNS.2005.856874

DO - 10.1109/TNS.2005.856874

M3 - Article

AN - SCOPUS:29244489577

VL - 52

SP - 1932

EP - 1936

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 5 III

ER -