Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals

P. Basa, Z. Horváth, T. Jászi, A. Pap, L. Dobos, B. Pécz, L. Tóth, P. Szöllosi

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

In this work, the electrical and memory behaviour of metal-silicon nitride-silicon structures with an embedded nanocrystalline silicon layer, which either consists of separated silicon nanocrystals, or is a continuous nanocrystalline layer, are presented. The structures were prepared by low-pressure chemical vapour deposition (LPCVD). The effect of the duration of deposition and the structure of the nanocrystalline layer were studied. The writing/erasing behaviour was similar for all the structures, but the retention properties were much worse in the structure with a continuous nanocrystalline layer, than in the structures with separated Si nanocrystals. This indicates that Si nanocrystals play role in charge storage in the studied structures.

Original languageEnglish
Pages (from-to)71-75
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume38
Issue number1-2
DOIs
Publication statusPublished - Apr 2007

Fingerprint

Silicon nitride
silicon nitrides
Nanocrystals
nanocrystals
electrical properties
Silicon
Data storage equipment
Nanocrystalline silicon
Low pressure chemical vapor deposition
silicon
metal nitrides
Metals
low pressure
vapor deposition
silicon nitride

Keywords

  • LPCVD
  • MNS
  • Nonvolatile memory
  • Si nanocrystals
  • Silicon nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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abstract = "In this work, the electrical and memory behaviour of metal-silicon nitride-silicon structures with an embedded nanocrystalline silicon layer, which either consists of separated silicon nanocrystals, or is a continuous nanocrystalline layer, are presented. The structures were prepared by low-pressure chemical vapour deposition (LPCVD). The effect of the duration of deposition and the structure of the nanocrystalline layer were studied. The writing/erasing behaviour was similar for all the structures, but the retention properties were much worse in the structure with a continuous nanocrystalline layer, than in the structures with separated Si nanocrystals. This indicates that Si nanocrystals play role in charge storage in the studied structures.",
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AU - Basa, P.

AU - Horváth, Z.

AU - Jászi, T.

AU - Pap, A.

AU - Dobos, L.

AU - Pécz, B.

AU - Tóth, L.

AU - Szöllosi, P.

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AB - In this work, the electrical and memory behaviour of metal-silicon nitride-silicon structures with an embedded nanocrystalline silicon layer, which either consists of separated silicon nanocrystals, or is a continuous nanocrystalline layer, are presented. The structures were prepared by low-pressure chemical vapour deposition (LPCVD). The effect of the duration of deposition and the structure of the nanocrystalline layer were studied. The writing/erasing behaviour was similar for all the structures, but the retention properties were much worse in the structure with a continuous nanocrystalline layer, than in the structures with separated Si nanocrystals. This indicates that Si nanocrystals play role in charge storage in the studied structures.

KW - LPCVD

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KW - Silicon nitride

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