Electrical and memory properties of Si 3N 4 MIS structures with embedded Si nanocrystals

Z. Horváth, P. Basa, T. Jászi, A. Pap, L. Dobos, B. Pécz, L. Tóth, P. Szöllosi, K. Nagy

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si 3N 4 control layer and different SiO 2 or Si 3N 4 tunnel layers. It was obtained that Si nanocrystals improve the charging behaviour of the MNOS structures. Memory window width of 1.3 V and 2.0 V were obtained for pulse amplitudes of ±9 V and ±10 V, 100 ms, respectively. The extrapolated memory window after 10 years is about 15% of its initial value.

Original languageEnglish
Pages (from-to)812-817
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Volume8
Issue number2
DOIs
Publication statusPublished - Feb 2008

Fingerprint

Management information systems
Nanoparticles
Nanocrystals
Data storage equipment
Vapor Pressure
Low pressure chemical vapor deposition
Tunnels

Keywords

  • MNOS
  • MNS
  • Non-volatile memory
  • Silicon nanocrystals
  • Silicon nitride

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Materials Science (miscellaneous)
  • Engineering (miscellaneous)

Cite this

Electrical and memory properties of Si 3N 4 MIS structures with embedded Si nanocrystals. / Horváth, Z.; Basa, P.; Jászi, T.; Pap, A.; Dobos, L.; Pécz, B.; Tóth, L.; Szöllosi, P.; Nagy, K.

In: Journal of Nanoscience and Nanotechnology, Vol. 8, No. 2, 02.2008, p. 812-817.

Research output: Contribution to journalArticle

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AU - Pécz, B.

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AU - Szöllosi, P.

AU - Nagy, K.

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