Electrical and memory properties of Si 3N 4 MIS structures with embedded Si nanocrystals

Zs J. Horváth, P. Basa, T. Jászi, A. E. Pap, L. Dobos, B. Pécz, L. Tóth, P. Szöllosi, K. Nagy

Research output: Contribution to journalArticle

16 Citations (Scopus)


Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si 3N 4 control layer and different SiO 2 or Si 3N 4 tunnel layers. It was obtained that Si nanocrystals improve the charging behaviour of the MNOS structures. Memory window width of 1.3 V and 2.0 V were obtained for pulse amplitudes of ±9 V and ±10 V, 100 ms, respectively. The extrapolated memory window after 10 years is about 15% of its initial value.

Original languageEnglish
Pages (from-to)812-817
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Issue number2
Publication statusPublished - Feb 1 2008


  • MNOS
  • MNS
  • Non-volatile memory
  • Silicon nanocrystals
  • Silicon nitride

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Electrical and memory properties of Si <sub>3</sub>N <sub>4</sub> MIS structures with embedded Si nanocrystals'. Together they form a unique fingerprint.

  • Cite this