Electrical and memory properties of non-volatile memory structures with embedded Si nanocrystals

Zs J. Horváth, P. Basa, T. Jászi, A. E. Pap, P. Szöllösi, K. Nagy, V. Hardy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N 4 control layer and a SiO2 or a Si3N 4 tunnel layer. It was obtained that the charging behaviour of structures with SiO2 tunnel layer was better than with Si 3N4 tunnel layer.

Original languageEnglish
Title of host publicationConference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06
Pages205-208
Number of pages4
DOIs
Publication statusPublished - Dec 1 2006
Event6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06 - Smolenice Castle, Slovakia
Duration: Oct 16 2006Oct 18 2006

Publication series

NameConference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06

Other

Other6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06
CountrySlovakia
CitySmolenice Castle
Period10/16/0610/18/06

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

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  • Cite this

    Horváth, Z. J., Basa, P., Jászi, T., Pap, A. E., Szöllösi, P., Nagy, K., & Hardy, V. (2006). Electrical and memory properties of non-volatile memory structures with embedded Si nanocrystals. In Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06 (pp. 205-208). [4133114] (Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06). https://doi.org/10.1109/ASDAM.2006.331190