Electrical and luminescence properties of (CdZn)Te single crystals prepared by the vertical gradient freezing method

P. Höschl, Yu M. Ivanov, E. Belas, J. Franc, R. Grill, P. Hlídek, P. Moravec, M. Zvára, H. Sitter, A. L. Toth

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29 Citations (Scopus)

Abstract

Cd1-xZnxTe (x = 0.04-0.1) single crystals with a diameter up to 100mm and maximum height of 35mm were prepared in a vertical arrangement by gradual cooling of the melt. The crystals grew in most cases in <111> orientation and they are twin-free. The average density of dislocation pits is 5 × 104 cm-2. The FWHM values ranging from 25 to 8 arcsec were obtained on the (111)A face even near the edge of the ingot. Optical transmittance reaches 63% at 10 μm in most cases. The typical single crystals are p-type with a carrier concentration in the range of 1014-1016 cm-3 and mobility of 50-100 cm2/V s at 300 K. An important acceptor level influencing carrier concentration was found to be 140 meV above the valence band. Diffusion length of both minority electrons and holes was determined to be typically 3-10 μm. In the luminescence spectra, free and bound exciton recombination bands were resolved together with donor-and acceptor- type defect features.

Original languageEnglish
Pages (from-to)1039-1043
Number of pages5
JournalJournal of Crystal Growth
Volume184-185
DOIs
Publication statusPublished - 1998

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Höschl, P., Ivanov, Y. M., Belas, E., Franc, J., Grill, R., Hlídek, P., Moravec, P., Zvára, M., Sitter, H., & Toth, A. L. (1998). Electrical and luminescence properties of (CdZn)Te single crystals prepared by the vertical gradient freezing method. Journal of Crystal Growth, 184-185, 1039-1043. https://doi.org/10.1016/s0022-0248(98)80217-0