Gd and GdCo layers were evaporated onto n-type silicon and silicides were formed by in situ annealing at 400 and 700 °C. The electrical properties of the resulting Schottky diodes were investigated by current-voltage, capacitance-voltage and low frequency noise measurements. The Gd/Si contacts shows an ohmic behaviour for both annealing temperatures, while the GdCo/Si contacts show a rectifying behaviour with a high (approximately 0.65 eV) and a low (approximately 0.52 eV) Schottky barrier height for the annealing temperatures of 400 and 700 °C, respectively. It was found that Co retards the Gd-Si reaction and reduces the density of the donor-type point defects generated within the silicon subtrate during the Gd silicidation process.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry