Electrical and low frequency noise properties of Gd and GdCo silicide contacts on n-type Si

L. Dózsa, Zs J. Horváth, G. L. Molnár, G. Petõ, C. A. Dimitriadis, L. Papadimitriou, J. Brini, G. Kamarinos

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1 Citation (Scopus)

Abstract

Gd and GdCo layers were evaporated onto n-type silicon and silicides were formed by in situ annealing at 400 and 700 °C. The electrical properties of the resulting Schottky diodes were investigated by current-voltage, capacitance-voltage and low frequency noise measurements. The Gd/Si contacts shows an ohmic behaviour for both annealing temperatures, while the GdCo/Si contacts show a rectifying behaviour with a high (approximately 0.65 eV) and a low (approximately 0.52 eV) Schottky barrier height for the annealing temperatures of 400 and 700 °C, respectively. It was found that Co retards the Gd-Si reaction and reduces the density of the donor-type point defects generated within the silicon subtrate during the Gd silicidation process.

Original languageEnglish
Pages (from-to)653-657
Number of pages5
JournalSemiconductor Science and Technology
Volume15
Issue number7
DOIs
Publication statusPublished - Jul 1 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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