Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals

P. Basa, A. S. Alagoz, T. Lohner, M. Kulakci, R. Turan, K. Nagy, Z. Horváth

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

SiO2 layer structures with a middle layer containing Ge nanocrystals were prepared by sputtering on n- and p-type Si substrates, and by consecutive annealing. Ge content in the middle layer was varied in the range of 40-100%. Most of the structures exhibited low breakdown voltages. The current through the structures became Schottky-like after breakdown. However, some p-type samples showed a considerable memory effect. It was obtained by spectroscopic ellipsometry that the middle layer contains amorphous Ge phase as well. The results also suggest intermixing of the layers during the sputtering and/or the annealing process.

Original languageEnglish
Pages (from-to)3626-3629
Number of pages4
JournalApplied Surface Science
Volume254
Issue number12
DOIs
Publication statusPublished - Apr 15 2008

Fingerprint

Ellipsometry
Nanocrystals
ellipsometry
Sputtering
nanocrystals
Annealing
Spectroscopic ellipsometry
Electric breakdown
Data storage equipment
sputtering
Substrates
annealing
electrical faults
breakdown

Keywords

  • Annealing
  • Ge nanocrystals
  • SiO structure
  • Sputtering

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals. / Basa, P.; Alagoz, A. S.; Lohner, T.; Kulakci, M.; Turan, R.; Nagy, K.; Horváth, Z.

In: Applied Surface Science, Vol. 254, No. 12, 15.04.2008, p. 3626-3629.

Research output: Contribution to journalArticle

Basa, P. ; Alagoz, A. S. ; Lohner, T. ; Kulakci, M. ; Turan, R. ; Nagy, K. ; Horváth, Z. / Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals. In: Applied Surface Science. 2008 ; Vol. 254, No. 12. pp. 3626-3629.
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