Elastic reflection of electrons by porous silicon layered (PSL) surfaces: Effects of porosity

C. Robert, L. Bideux, B. Gruzza, E. Vazsonyi, G. Gergely

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The electrical and optical properties of porous silicon layers deposited on silicon substrates are determined by their electrochemical preparation conditions. Porous silicon layers (PSL) deposited on low resistivity (10 -3 Ω cm) boron doped p + Si exhibits channel structure, whereas layers formed on p type (1-3 Ω cm) Si wafers are sponge type. In the abundant literature on PSL, little attention was paid to their electron spectra. We presented in this paper, a study of p + and p type PSL samples by elastic peak electron spectroscopy (EPES). The elastic reflection coefficient r e (E, P) is strongly affected by physical parameters of the sample as the porosity, the substrate Si type as well the presence of H adatoms within the pores. r e (E, P) spectra are measured in absolute units (%) with a retarding field analyzer. A general tendency of spectra was the decrease of intensity with P (porosity) and E (primary electron energy). We have observed that HF treatment of the samples is producing a dramatic decrease of r eH (E, P) in the low energy range (E = 50-150 eV). r eH (E, P) intensities were measured at E = 50, 100 and 150 eV. We observed that the excess reflection (coming from the pores sides) becomes important for porosity P > 0.6. A phenomenological model is presented based on the intact Si surface and reflection of electrons from the pores.

Original languageEnglish
Pages (from-to)111-115
Number of pages5
JournalApplied Surface Science
Issue number2
Publication statusPublished - Jun 1 1997


ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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