Elaboration of Ni/InP contacts: Solid state reactions and associated mechanisms

E. Ghegin, F. Nemouchi, J. Lábár, C. Perrin, K. Hoummada, S. Favier, S. Gurban, I. Sagnes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The metallurgical properties of the Ni/n-InP system have been investigated. We report the formation of a compositionally nonuniform Ni-In-P amorphous layer during the DC sputtering metal deposition process which includes an Ar+ cleaning. During various heat treatments the simultaneous appearance of the Ni2P and Ni3P binary phases and the Ni2InP ternary phase were observed. For temperature equal to or greater than 350°C we highlighted the partition and precipitation of In. Thanks to RTP and longtime annealings we pointed out the predominance of diffusion on the formation of the Ni2P, Ni3P and Ni2InP phases and that of nucleation on the partition and precipitation of In.

Original languageEnglish
Title of host publication15th International Workshop on Junction Technology, IWJT 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages58-60
Number of pages3
ISBN (Electronic)9784863485174
DOIs
Publication statusPublished - May 9 2016
Event15th International Workshop on Junction Technology, IWJT 2015 - Kyoto, Japan
Duration: Jun 11 2015Jun 12 2015

Other

Other15th International Workshop on Junction Technology, IWJT 2015
CountryJapan
CityKyoto
Period6/11/156/12/15

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Ghegin, E., Nemouchi, F., Lábár, J., Perrin, C., Hoummada, K., Favier, S., Gurban, S., & Sagnes, I. (2016). Elaboration of Ni/InP contacts: Solid state reactions and associated mechanisms. In 15th International Workshop on Junction Technology, IWJT 2015 (pp. 58-60). [7467096] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWJT.2015.7467096