Effects of rapid thermal annealing on InP layers grown on GaAs substrates by gas-source molecular beam epitaxy

Ferenc Riesz, Keijo Rakennus, Tuula Hakkarainen, Markus Pessa

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

InP layers were grown on (100) GaAs substrates by gas-source molecular beam epitaxy and then were annealed by the rapid thermal annealing (RT A) method. The effects of annealing time and temperature on crystalline structure were studied by double-crystal x-ray diffraction. Significant improvement in crystalline quality was observed, due to RT A. The smallest linewidth was 315 s of arc for the 2-μm-thick layers upon annealing at 940 °C for 10 s. Using lower temperatures and longer annealing times, the linewidths remained broader but the loss of phosphorus was reduced.

Original languageEnglish
Pages (from-to)176-177
Number of pages2
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume9
Issue number1
Publication statusPublished - Jan 1991

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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