The gas sensitivity of Ga2O3 thin-film n-type conductors was investigated at temperatures of 500°-1000°C. Palladium dispersions whose particle sizes are dependent on the preceding annealing processes were deposited by a wet-chemical technique onto Ga2O3 thin-film ceramics. The palladium clusters and their temperature-dependent growth were detected using scanning electron microscopy micrographs and X-ray photoemission spectroscopy measurements. The effect of the palladium dispersions on the gas-sensitive behavior of the Ga2O3 ceramics was investigated in various O2/H2 mixtures in the N2 carrier gas at 700°C. The conductivity of the ceramics treated in this way was dependent on the O2 partial pressure, as well as on the H2 partial pressure of the surrounding gas atmosphere. The ceramic conductivity can be described as a function of the O2:H2 ratio, in accordance with the relation σ ≈ (pO2/pH2)-1/3.
|Number of pages||7|
|Journal||Journal of the American Ceramic Society|
|Publication status||Published - Feb 1 1997|
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry