Effective implantation of light emitting centers by plasma immersion ion implantation and focused ion beam methods into nanosized diamond

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Abstract

Two different implantation techniques, plasma immersion ion implantation and focused ion beam, were used to introduce nitrogen ions into detonation nanodiamond crystals with the aim to create nitrogen-vacancy related optically active centers of light emission in near UV region. Previously samples were subjected to a defect creation process by helium irradiation in both cases. Heat treatments at different temperatures (750°C, 450°C) were applied in order to initiate the formation of nitrogen-vacancy related complex centers and to decrease the sp2 carbon content formed under different treatments. As a result, a relatively narrow and intensive emission band with fine structure at 2.98, 2.83 and 2.71 eV photon energies was observed in the light emission spectrum. It was assigned to the N3 complex defect center. The formation of this defect center can be expected by taking into account the relatively high dose of implanted nitrogen ions and the overlapped depth distribution of vacancies and nitrogen. The calculated depth profiles distribution for both implanted nitrogen and helium by SRIM simulation support this expectation.

Original languageEnglish
Pages (from-to)577-582
Number of pages6
JournalApplied Surface Science
Volume328
DOIs
Publication statusPublished - Feb 15 2015

Fingerprint

Diamond
Focused ion beams
Ion implantation
Diamonds
Nitrogen
Plasmas
Vacancies
Helium
Light emission
Defects
Ions
Nanodiamonds
Detonation
Carbon
Photons
Heat treatment
Irradiation
Crystals

Keywords

  • Color center
  • Focused ion beam
  • Nanodiamond
  • Plasma immersion ion implantation
  • SRIM calculation

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

@article{5336b8856aab47d693a94f48f34fb261,
title = "Effective implantation of light emitting centers by plasma immersion ion implantation and focused ion beam methods into nanosized diamond",
abstract = "Two different implantation techniques, plasma immersion ion implantation and focused ion beam, were used to introduce nitrogen ions into detonation nanodiamond crystals with the aim to create nitrogen-vacancy related optically active centers of light emission in near UV region. Previously samples were subjected to a defect creation process by helium irradiation in both cases. Heat treatments at different temperatures (750°C, 450°C) were applied in order to initiate the formation of nitrogen-vacancy related complex centers and to decrease the sp2 carbon content formed under different treatments. As a result, a relatively narrow and intensive emission band with fine structure at 2.98, 2.83 and 2.71 eV photon energies was observed in the light emission spectrum. It was assigned to the N3 complex defect center. The formation of this defect center can be expected by taking into account the relatively high dose of implanted nitrogen ions and the overlapped depth distribution of vacancies and nitrogen. The calculated depth profiles distribution for both implanted nitrogen and helium by SRIM simulation support this expectation.",
keywords = "Color center, Focused ion beam, Nanodiamond, Plasma immersion ion implantation, SRIM calculation",
author = "L. Himics and S. T{\'o}th and M. Veres and A. T{\'o}th and M. Ko{\'o}s",
year = "2015",
month = "2",
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doi = "10.1016/j.apsusc.2014.12.103",
language = "English",
volume = "328",
pages = "577--582",
journal = "Applied Surface Science",
issn = "0169-4332",
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T1 - Effective implantation of light emitting centers by plasma immersion ion implantation and focused ion beam methods into nanosized diamond

AU - Himics, L.

AU - Tóth, S.

AU - Veres, M.

AU - Tóth, A.

AU - Koós, M.

PY - 2015/2/15

Y1 - 2015/2/15

N2 - Two different implantation techniques, plasma immersion ion implantation and focused ion beam, were used to introduce nitrogen ions into detonation nanodiamond crystals with the aim to create nitrogen-vacancy related optically active centers of light emission in near UV region. Previously samples were subjected to a defect creation process by helium irradiation in both cases. Heat treatments at different temperatures (750°C, 450°C) were applied in order to initiate the formation of nitrogen-vacancy related complex centers and to decrease the sp2 carbon content formed under different treatments. As a result, a relatively narrow and intensive emission band with fine structure at 2.98, 2.83 and 2.71 eV photon energies was observed in the light emission spectrum. It was assigned to the N3 complex defect center. The formation of this defect center can be expected by taking into account the relatively high dose of implanted nitrogen ions and the overlapped depth distribution of vacancies and nitrogen. The calculated depth profiles distribution for both implanted nitrogen and helium by SRIM simulation support this expectation.

AB - Two different implantation techniques, plasma immersion ion implantation and focused ion beam, were used to introduce nitrogen ions into detonation nanodiamond crystals with the aim to create nitrogen-vacancy related optically active centers of light emission in near UV region. Previously samples were subjected to a defect creation process by helium irradiation in both cases. Heat treatments at different temperatures (750°C, 450°C) were applied in order to initiate the formation of nitrogen-vacancy related complex centers and to decrease the sp2 carbon content formed under different treatments. As a result, a relatively narrow and intensive emission band with fine structure at 2.98, 2.83 and 2.71 eV photon energies was observed in the light emission spectrum. It was assigned to the N3 complex defect center. The formation of this defect center can be expected by taking into account the relatively high dose of implanted nitrogen ions and the overlapped depth distribution of vacancies and nitrogen. The calculated depth profiles distribution for both implanted nitrogen and helium by SRIM simulation support this expectation.

KW - Color center

KW - Focused ion beam

KW - Nanodiamond

KW - Plasma immersion ion implantation

KW - SRIM calculation

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