The bombardment of the semiconductor with different particles often results in the change of the doping concentration at the semiconductor surface. In this paper the effects of this near-interface concentration change on the apparent and real Schottky barrier heights are discussed. Experimental results obtained in GaAs Schottky junctions prepared on ion-bombarded semiconductor surfaces are analysed, and it, is shown that their electrical characteristics are strongly influenced by the near-interface concentration change due to the ion bombardement.
ASJC Scopus subject areas
- Physics and Astronomy(all)