Effect of the ion bombardment on the apparent barrier height in GaAs Schottky junctions

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Abstract

The bombardment of the semiconductor with different particles often results in the change of the doping concentration at the semiconductor surface. In this paper the effects of this near-interface concentration change on the apparent and real Schottky barrier heights are discussed. Experimental results obtained in GaAs Schottky junctions prepared on ion-bombarded semiconductor surfaces are analysed, and it, is shown that their electrical characteristics are strongly influenced by the near-interface concentration change due to the ion bombardement.

Original languageEnglish
Pages (from-to)57-64
Number of pages8
JournalActa Physica Hungarica
Volume74
Issue number1-2
DOIs
Publication statusPublished - Mar 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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