Effect of temperature on surface modification and the trapping/ re-emission behaviour of Al and an AlMgSi alloy during MeV energy He implantation and post-irradiation annealing

N. T. My, F. Pászti, G. Mezey, A. Manuaba, E. Kótai, J. Gyulai

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Abstract

rradiation at different temperatures by MeV energy 4He+ ions and post-irradiation annealing performed on Al and an AlMgSi alloy were studied by RBS (Rutherford Back Scattering), SEM and optical microscopy. For the applied temperatures (RT-825 K) and energies (0.6-3.5 MeV) blistering or exfoliation, but no porous structure has been observed on the implanted area. For all implantation energies, the peak He concentration corresponding to a critical dose for surface deformation is in strong correlation with the tensile strength of the target material. At RT it has a contant value (33 at% for Al and 48 at% for AlMgSi), independent of the bombarding energy. At elevated temperatures it decreases in accordance with the temperature dependence of tensile strength. During post-irradiation annealing the He is released in two stages. At the onset of blistering or exfoliation, the release is originated from the volume under the detaching layers; the second stage of release occurs at temperature around 780 K in both materials.

Original languageEnglish
Pages (from-to)222-232
Number of pages11
JournalJournal of Nuclear Materials
Volume165
Issue number3
DOIs
Publication statusPublished - 1989

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Surface treatment
implantation
trapping
Irradiation
Annealing
irradiation
annealing
tensile strength
Tensile strength
Temperature
temperature
energy
Optical microscopy
microscopy
dosage
temperature dependence
scanning electron microscopy
Scattering
Ions
scattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

@article{4202ee3166bf4f3aa4095dffe0b079d4,
title = "Effect of temperature on surface modification and the trapping/ re-emission behaviour of Al and an AlMgSi alloy during MeV energy He implantation and post-irradiation annealing",
abstract = "rradiation at different temperatures by MeV energy 4He+ ions and post-irradiation annealing performed on Al and an AlMgSi alloy were studied by RBS (Rutherford Back Scattering), SEM and optical microscopy. For the applied temperatures (RT-825 K) and energies (0.6-3.5 MeV) blistering or exfoliation, but no porous structure has been observed on the implanted area. For all implantation energies, the peak He concentration corresponding to a critical dose for surface deformation is in strong correlation with the tensile strength of the target material. At RT it has a contant value (33 at{\%} for Al and 48 at{\%} for AlMgSi), independent of the bombarding energy. At elevated temperatures it decreases in accordance with the temperature dependence of tensile strength. During post-irradiation annealing the He is released in two stages. At the onset of blistering or exfoliation, the release is originated from the volume under the detaching layers; the second stage of release occurs at temperature around 780 K in both materials.",
author = "My, {N. T.} and F. P{\'a}szti and G. Mezey and A. Manuaba and E. K{\'o}tai and J. Gyulai",
year = "1989",
doi = "10.1016/0022-3115(89)90199-2",
language = "English",
volume = "165",
pages = "222--232",
journal = "Journal of Nuclear Materials",
issn = "0022-3115",
publisher = "Elsevier",
number = "3",

}

TY - JOUR

T1 - Effect of temperature on surface modification and the trapping/ re-emission behaviour of Al and an AlMgSi alloy during MeV energy He implantation and post-irradiation annealing

AU - My, N. T.

AU - Pászti, F.

AU - Mezey, G.

AU - Manuaba, A.

AU - Kótai, E.

AU - Gyulai, J.

PY - 1989

Y1 - 1989

N2 - rradiation at different temperatures by MeV energy 4He+ ions and post-irradiation annealing performed on Al and an AlMgSi alloy were studied by RBS (Rutherford Back Scattering), SEM and optical microscopy. For the applied temperatures (RT-825 K) and energies (0.6-3.5 MeV) blistering or exfoliation, but no porous structure has been observed on the implanted area. For all implantation energies, the peak He concentration corresponding to a critical dose for surface deformation is in strong correlation with the tensile strength of the target material. At RT it has a contant value (33 at% for Al and 48 at% for AlMgSi), independent of the bombarding energy. At elevated temperatures it decreases in accordance with the temperature dependence of tensile strength. During post-irradiation annealing the He is released in two stages. At the onset of blistering or exfoliation, the release is originated from the volume under the detaching layers; the second stage of release occurs at temperature around 780 K in both materials.

AB - rradiation at different temperatures by MeV energy 4He+ ions and post-irradiation annealing performed on Al and an AlMgSi alloy were studied by RBS (Rutherford Back Scattering), SEM and optical microscopy. For the applied temperatures (RT-825 K) and energies (0.6-3.5 MeV) blistering or exfoliation, but no porous structure has been observed on the implanted area. For all implantation energies, the peak He concentration corresponding to a critical dose for surface deformation is in strong correlation with the tensile strength of the target material. At RT it has a contant value (33 at% for Al and 48 at% for AlMgSi), independent of the bombarding energy. At elevated temperatures it decreases in accordance with the temperature dependence of tensile strength. During post-irradiation annealing the He is released in two stages. At the onset of blistering or exfoliation, the release is originated from the volume under the detaching layers; the second stage of release occurs at temperature around 780 K in both materials.

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U2 - 10.1016/0022-3115(89)90199-2

DO - 10.1016/0022-3115(89)90199-2

M3 - Article

VL - 165

SP - 222

EP - 232

JO - Journal of Nuclear Materials

JF - Journal of Nuclear Materials

SN - 0022-3115

IS - 3

ER -