Effect of pre-implanted oxygen in Si on the retention of implanted He

A. Manuaba, F. Pászti, A. R. Ramos, N. Q. Khánh, B. Pécz, Z. Zolnai, A. Tunyogi, E. Szilágyi

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5 Citations (Scopus)


Buried SiOx layers, with different x values, were formed by implanting 80 keV O+ ions with different fluences into single crystal Si samples at room temperature. Into each of these O pre-implanted layers, 20 keV He+ was implanted up to the fluence of 1 × 1017 ion/cm2. The He distribution profiles were determined by 2045 keV proton backscattering spectrometry. It was found that as the O content increases, the retained He gradually decreases at the beginning, then rapidly falls at x = 0.6 till it disappears at x = 1.3. The process that leads to this phenomenon is discussed.

Original languageEnglish
Pages (from-to)150-152
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1-2 SPEC. ISS.
Publication statusPublished - Aug 1 2006


  • He retention
  • He trapping
  • Implantation

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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