Effect of plasma parameters on the structure of CNx layers deposited by DC magnetron sputtering

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Abstract

CNx layers were grown on polished Si(100) wafers by reactive DC magnetron sputtering of a high purity graphite target by nitrogen ions. The deposited layers were characterized by XPS and FT-IR spectroscopy. The 'as-prepared' CNx layers contained approximately 20-40 at.% nitrogen measured by XPS. The large width and asymmetric shape of the C1s and N1s lines manisfested several chemical bonding states of the constituents. The two major components of the N 1s lines were assigned to the C=N double bonds (N1 at 398.2 eV B.E.) and to the C-N single bonds (N3 at 400.6 eV B.E.). The proportions of these line-components varied significantly with the preparation conditions and showed a correlation with the plasma parameters (electron density, ion current density and electron temperature) of the magnetron, as measured by a Langmuir-probe. The N3/N1 ratio increased with decreasing target-to-substrate distance. Significant differences were also observed in the 1100-1700 cm-1 region of the FT-IR spectra. For layers grown in the high electron-density plasma, a major increase in the intensity ratio of IR band at 1300 cm-1 to that at 1530 cm-1 was observed, which can be connected to the increase of the ratio of the sp3 type N to the sp2 type one in the CN clusters.

Original languageEnglish
Pages (from-to)1200-1204
Number of pages5
JournalDiamond and Related Materials
Volume11
Issue number3-6
DOIs
Publication statusPublished - Mar 2002

Fingerprint

Magnetron sputtering
Carrier concentration
magnetron sputtering
Nitrogen
X ray photoelectron spectroscopy
direct current
Ions
Plasmas
Langmuir probes
Graphite
Electron temperature
Infrared spectroscopy
Current density
nitrogen ions
Substrates
electrostatic probes
ion currents
proportion
purity
graphite

Keywords

  • CN
  • Magnetron sputtering
  • Nitrides
  • XPS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

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title = "Effect of plasma parameters on the structure of CNx layers deposited by DC magnetron sputtering",
abstract = "CNx layers were grown on polished Si(100) wafers by reactive DC magnetron sputtering of a high purity graphite target by nitrogen ions. The deposited layers were characterized by XPS and FT-IR spectroscopy. The 'as-prepared' CNx layers contained approximately 20-40 at.{\%} nitrogen measured by XPS. The large width and asymmetric shape of the C1s and N1s lines manisfested several chemical bonding states of the constituents. The two major components of the N 1s lines were assigned to the C=N double bonds (N1 at 398.2 eV B.E.) and to the C-N single bonds (N3 at 400.6 eV B.E.). The proportions of these line-components varied significantly with the preparation conditions and showed a correlation with the plasma parameters (electron density, ion current density and electron temperature) of the magnetron, as measured by a Langmuir-probe. The N3/N1 ratio increased with decreasing target-to-substrate distance. Significant differences were also observed in the 1100-1700 cm-1 region of the FT-IR spectra. For layers grown in the high electron-density plasma, a major increase in the intensity ratio of IR band at 1300 cm-1 to that at 1530 cm-1 was observed, which can be connected to the increase of the ratio of the sp3 type N to the sp2 type one in the CN clusters.",
keywords = "CN, Magnetron sputtering, Nitrides, XPS",
author = "T. Ujv{\'a}ri and B. Szikora and M. Mohai and A. T{\'o}th and G. Keresztury and I. Bert{\'o}ti",
year = "2002",
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T1 - Effect of plasma parameters on the structure of CNx layers deposited by DC magnetron sputtering

AU - Ujvári, T.

AU - Szikora, B.

AU - Mohai, M.

AU - Tóth, A.

AU - Keresztury, G.

AU - Bertóti, I.

PY - 2002/3

Y1 - 2002/3

N2 - CNx layers were grown on polished Si(100) wafers by reactive DC magnetron sputtering of a high purity graphite target by nitrogen ions. The deposited layers were characterized by XPS and FT-IR spectroscopy. The 'as-prepared' CNx layers contained approximately 20-40 at.% nitrogen measured by XPS. The large width and asymmetric shape of the C1s and N1s lines manisfested several chemical bonding states of the constituents. The two major components of the N 1s lines were assigned to the C=N double bonds (N1 at 398.2 eV B.E.) and to the C-N single bonds (N3 at 400.6 eV B.E.). The proportions of these line-components varied significantly with the preparation conditions and showed a correlation with the plasma parameters (electron density, ion current density and electron temperature) of the magnetron, as measured by a Langmuir-probe. The N3/N1 ratio increased with decreasing target-to-substrate distance. Significant differences were also observed in the 1100-1700 cm-1 region of the FT-IR spectra. For layers grown in the high electron-density plasma, a major increase in the intensity ratio of IR band at 1300 cm-1 to that at 1530 cm-1 was observed, which can be connected to the increase of the ratio of the sp3 type N to the sp2 type one in the CN clusters.

AB - CNx layers were grown on polished Si(100) wafers by reactive DC magnetron sputtering of a high purity graphite target by nitrogen ions. The deposited layers were characterized by XPS and FT-IR spectroscopy. The 'as-prepared' CNx layers contained approximately 20-40 at.% nitrogen measured by XPS. The large width and asymmetric shape of the C1s and N1s lines manisfested several chemical bonding states of the constituents. The two major components of the N 1s lines were assigned to the C=N double bonds (N1 at 398.2 eV B.E.) and to the C-N single bonds (N3 at 400.6 eV B.E.). The proportions of these line-components varied significantly with the preparation conditions and showed a correlation with the plasma parameters (electron density, ion current density and electron temperature) of the magnetron, as measured by a Langmuir-probe. The N3/N1 ratio increased with decreasing target-to-substrate distance. Significant differences were also observed in the 1100-1700 cm-1 region of the FT-IR spectra. For layers grown in the high electron-density plasma, a major increase in the intensity ratio of IR band at 1300 cm-1 to that at 1530 cm-1 was observed, which can be connected to the increase of the ratio of the sp3 type N to the sp2 type one in the CN clusters.

KW - CN

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