Effect of neutron bombardment on the electrical characteristics of n-GaAs

Zs J. Horvath, E. Gombia, D. Pal, R. Mosca, G. Capannese, L. Dozsa, Vo Van Tuyen

Research output: Contribution to journalConference article

Abstract

Au/n-GaAs junctions prepared on GaAs wafers bombarded by neutrons before the Schottky metallization, have been studied by DLTS, current-voltage and capacitance-voltage measurements. The changes of the electrical behaviour have indicated that the bombardment yielded: i) a band of deep levels, ii) a shift of the Fermi-level pinning position, iii) an increase of the interface state density and the measure of the lateral inhomogeneity of the barrier height, and iv) a reduction of the effective doping level in the vicinity of the GaAs surface.

Original languageEnglish
Pages (from-to)I/-
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3975
Publication statusPublished - Jan 1 2000
EventIWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices - New Delhi, India
Duration: Dec 14 1999Dec 18 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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