Normalized collection efficiency (NCE) spectra have been measured in a-Si:H p-i-n junctions illuminated through either the p+ or n+ layer as a function of the applied voltage. The thickness of the i a-Si:H layer was varied too. Influence of microinhomogeneities of the i a-Si:H layer on NCE spectra has been investigated. Since the morphology can change continuously as the layer becomes thicker we supposed that also the electron mobility-lifetime product can change with the sample thickness and it can be comparable with the hole mobility-lifetime product close to the n+ layer. Measured curves were analyzed on the basis of the variable minority carrier transport model.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry