Effect of microinhomogeneities on collection efficiency spectra in (p-i-n)

M. Füstoss-Wégner, Dong Sung Kim, Hung Sung Pak, Gy Zentai, L. Pogány

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Abstract

Normalized collection efficiency (NCE) spectra have been measured in a-Si:H p-i-n junctions illuminated through either the p+ or n+ layer as a function of the applied voltage. The thickness of the i a-Si:H layer was varied too. Influence of microinhomogeneities of the i a-Si:H layer on NCE spectra has been investigated. Since the morphology can change continuously as the layer becomes thicker we supposed that also the electron mobility-lifetime product can change with the sample thickness and it can be comparable with the hole mobility-lifetime product close to the n+ layer. Measured curves were analyzed on the basis of the variable minority carrier transport model.

Original languageEnglish
Pages (from-to)1327-1330
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume97-98
Issue numberPART 2
DOIs
Publication statusPublished - Dec 2 1987

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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