Effect of microinhomogeneities on collection efficiency spectra in (p-i-n)

M. Füstoss-Wégner, Dong Sung Kim, Hung Sung Pak, Gy Zentai, L. Pogány

Research output: Contribution to journalArticle

Abstract

Normalized collection efficiency (NCE) spectra have been measured in a-Si:H p-i-n junctions illuminated through either the p+ or n+ layer as a function of the applied voltage. The thickness of the i a-Si:H layer was varied too. Influence of microinhomogeneities of the i a-Si:H layer on NCE spectra has been investigated. Since the morphology can change continuously as the layer becomes thicker we supposed that also the electron mobility-lifetime product can change with the sample thickness and it can be comparable with the hole mobility-lifetime product close to the n+ layer. Measured curves were analyzed on the basis of the variable minority carrier transport model.

Original languageEnglish
Pages (from-to)1327-1330
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume97-98
Issue numberPART 2
DOIs
Publication statusPublished - Dec 2 1987

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Hole mobility
Carrier transport
Electron mobility
p-i-n junctions
Electric potential
life (durability)
hole mobility
products
minority carriers
electron mobility
electric potential
curves

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Effect of microinhomogeneities on collection efficiency spectra in (p-i-n). / Füstoss-Wégner, M.; Kim, Dong Sung; Pak, Hung Sung; Zentai, Gy; Pogány, L.

In: Journal of Non-Crystalline Solids, Vol. 97-98, No. PART 2, 02.12.1987, p. 1327-1330.

Research output: Contribution to journalArticle

Füstoss-Wégner, M. ; Kim, Dong Sung ; Pak, Hung Sung ; Zentai, Gy ; Pogány, L. / Effect of microinhomogeneities on collection efficiency spectra in (p-i-n). In: Journal of Non-Crystalline Solids. 1987 ; Vol. 97-98, No. PART 2. pp. 1327-1330.
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