Effect of low hydrostatic pressures on the solid state reactions in multilayers

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Abstract

In amorphous Si-Ge multilayers annealing at 858 K under 180 bar led to the depression of porosity formation. In crystalline Ni-Zr multilayers a small enhancement of the growth of amorphous phase was observed under 200 bar. In Co-Sn bilayers the kinetics of electrical resistivity at 298 K showed a characteristic cross-over as the pressure increased above 150 bar.

Original languageEnglish
Pages (from-to)417-418
Number of pages2
JournalJournal of Magnetism and Magnetic Materials
Volume156
Issue number1-3
DOIs
Publication statusPublished - Jan 1 1996
EventProceedings of the 1995 2nd International Symposium on Metallic Multilayers, MML - Cambridge, UK
Duration: Sep 11 1995Sep 14 1995

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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