Effect of low hydrostatic pressures on the solid state reactions in multilayers

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Abstract

In amorphous Si-Ge multilayers annealing at 858 K under 180 bar led to the depression of porosity formation. In crystalline Ni-Zr multilayers a small enhancement of the growth of amorphous phase was observed under 200 bar. In Co-Sn bilayers the kinetics of electrical resistivity at 298 K showed a characteristic cross-over as the pressure increased above 150 bar.

Original languageEnglish
Pages (from-to)417-418
Number of pages2
JournalJournal of Magnetism and Magnetic Materials
Volume156
Issue number1-3
DOIs
Publication statusPublished - Apr 1996

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Hydrostatic pressure
Solid state reactions
hydrostatic pressure
Multilayers
low pressure
solid state
porosity
electrical resistivity
annealing
augmentation
kinetics
Porosity
Annealing
Crystalline materials
Kinetics

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

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title = "Effect of low hydrostatic pressures on the solid state reactions in multilayers",
abstract = "In amorphous Si-Ge multilayers annealing at 858 K under 180 bar led to the depression of porosity formation. In crystalline Ni-Zr multilayers a small enhancement of the growth of amorphous phase was observed under 200 bar. In Co-Sn bilayers the kinetics of electrical resistivity at 298 K showed a characteristic cross-over as the pressure increased above 150 bar.",
author = "L. Dar{\'o}czi and D. Beke and G. Langer and G. Radn{\'o}czi and Z. Czig{\'a}ny",
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T1 - Effect of low hydrostatic pressures on the solid state reactions in multilayers

AU - Daróczi, L.

AU - Beke, D.

AU - Langer, G.

AU - Radnóczi, G.

AU - Czigány, Z.

PY - 1996/4

Y1 - 1996/4

N2 - In amorphous Si-Ge multilayers annealing at 858 K under 180 bar led to the depression of porosity formation. In crystalline Ni-Zr multilayers a small enhancement of the growth of amorphous phase was observed under 200 bar. In Co-Sn bilayers the kinetics of electrical resistivity at 298 K showed a characteristic cross-over as the pressure increased above 150 bar.

AB - In amorphous Si-Ge multilayers annealing at 858 K under 180 bar led to the depression of porosity formation. In crystalline Ni-Zr multilayers a small enhancement of the growth of amorphous phase was observed under 200 bar. In Co-Sn bilayers the kinetics of electrical resistivity at 298 K showed a characteristic cross-over as the pressure increased above 150 bar.

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JF - Journal of Magnetism and Magnetic Materials

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