Effect of lattice mismatch on the decay of rheed oscillations during growth of strained InGaAs/GaAs heterostructures

A. Nemcsics, F. Riesz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The decay of the oscillation of the intensity of the specular beam of the reflection high-energy electron diffraction pattern is analyzed during the molecular beam epitaxial growth of strained InGaAs/GaAs heteroepitaxial structures. The oscillations' amplitude was found to decrease exponentially versus time during the InGaAs growth. Further, the decay time constant decreases with InAs mole fraction, indicating that the lattice strain increases islanding during growth. A simple semi-quantitative model based on the growth front roughening is formulated to explain the results. Assuming that the oscillation decay is related partly to the strain and partly due to kinetic effects during growth, a decay component that is solely due to strain can be separated; we find that the onset of increased roughening due to misfit strain component roughly corresponds to the equilibrium critical layer thickness.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsJ.M. Millunchick, A.L. Barabasi, N.A. Modine, E.D. Jones
Pages225-230
Number of pages6
Volume618
Publication statusPublished - 2000
EventMorphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films - San Francisco, CA, United States
Duration: Apr 24 2000Apr 27 2000

Other

OtherMorphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films
CountryUnited States
CitySan Francisco, CA
Period4/24/004/27/00

Fingerprint

Lattice mismatch
Heterojunctions
Reflection high energy electron diffraction
Molecular beams
Epitaxial growth
Diffraction patterns
Kinetics
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Nemcsics, A., & Riesz, F. (2000). Effect of lattice mismatch on the decay of rheed oscillations during growth of strained InGaAs/GaAs heterostructures. In J. M. Millunchick, A. L. Barabasi, N. A. Modine, & E. D. Jones (Eds.), Materials Research Society Symposium - Proceedings (Vol. 618, pp. 225-230)

Effect of lattice mismatch on the decay of rheed oscillations during growth of strained InGaAs/GaAs heterostructures. / Nemcsics, A.; Riesz, F.

Materials Research Society Symposium - Proceedings. ed. / J.M. Millunchick; A.L. Barabasi; N.A. Modine; E.D. Jones. Vol. 618 2000. p. 225-230.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nemcsics, A & Riesz, F 2000, Effect of lattice mismatch on the decay of rheed oscillations during growth of strained InGaAs/GaAs heterostructures. in JM Millunchick, AL Barabasi, NA Modine & ED Jones (eds), Materials Research Society Symposium - Proceedings. vol. 618, pp. 225-230, Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films, San Francisco, CA, United States, 4/24/00.
Nemcsics A, Riesz F. Effect of lattice mismatch on the decay of rheed oscillations during growth of strained InGaAs/GaAs heterostructures. In Millunchick JM, Barabasi AL, Modine NA, Jones ED, editors, Materials Research Society Symposium - Proceedings. Vol. 618. 2000. p. 225-230
Nemcsics, A. ; Riesz, F. / Effect of lattice mismatch on the decay of rheed oscillations during growth of strained InGaAs/GaAs heterostructures. Materials Research Society Symposium - Proceedings. editor / J.M. Millunchick ; A.L. Barabasi ; N.A. Modine ; E.D. Jones. Vol. 618 2000. pp. 225-230
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