Effect of ion bombardment on CrSiO layers

an X-ray photoelectron spectroscopic study

I. Bertóti, A. Tóth, M. Mohai, R. Kelly, G. Marletta

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The behavior of simple oxides bombarded by ions of noble gases is widely documented in connection with studies involving electron and ion spectroscopies and transmission electron microscopy, and also with ion-beam assisted layer deposition or removal. In the present work a new approach to the problem of beam-oxide interaction involving a complex oxide possessing two cations is outlined. Complex oxide provide an unusual opportunity to gain insight into beam-oxide interaction for the simple reason that the two or more types of cation compete in forming bonds. Specifically, the effects of bombardments by 1-4 keV argon and nitrogen ions are compared for r.f. sputter deposited homogeneous, amorphous CrSiO layers. It is established that (a) Ar+ bombardment causes loss of O with the simultaneous formation of Si0 states and SiCr bonds, (b) N+2 bombardment causes still further loss of O as we have shown for a variety of simple oxides, and (c) at the same time N+2 bombardment diminishes the SiSi or SiCr bonds with indication of partial replacement by SiN and to a lesser extent by CrN bonds. These results can be explained by the prominent role of thermodynamic driving forces.

Original languageEnglish
Pages (from-to)211-217
Number of pages7
JournalThin Solid Films
Volume241
Issue number1-2
DOIs
Publication statusPublished - Apr 1 1994

Fingerprint

Ion bombardment
Photoelectrons
Oxides
bombardment
photoelectrons
X rays
oxides
ions
x rays
Ions
Cations
Positive ions
Noble Gases
cations
nitrogen ions
Argon
causes
Inert gases
Ion beams
electron spectroscopy

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Effect of ion bombardment on CrSiO layers : an X-ray photoelectron spectroscopic study. / Bertóti, I.; Tóth, A.; Mohai, M.; Kelly, R.; Marletta, G.

In: Thin Solid Films, Vol. 241, No. 1-2, 01.04.1994, p. 211-217.

Research output: Contribution to journalArticle

@article{5017fe22f793420da2c1d1d7ec8331ee,
title = "Effect of ion bombardment on CrSiO layers: an X-ray photoelectron spectroscopic study",
abstract = "The behavior of simple oxides bombarded by ions of noble gases is widely documented in connection with studies involving electron and ion spectroscopies and transmission electron microscopy, and also with ion-beam assisted layer deposition or removal. In the present work a new approach to the problem of beam-oxide interaction involving a complex oxide possessing two cations is outlined. Complex oxide provide an unusual opportunity to gain insight into beam-oxide interaction for the simple reason that the two or more types of cation compete in forming bonds. Specifically, the effects of bombardments by 1-4 keV argon and nitrogen ions are compared for r.f. sputter deposited homogeneous, amorphous CrSiO layers. It is established that (a) Ar+ bombardment causes loss of O with the simultaneous formation of Si0 states and SiCr bonds, (b) N+2 bombardment causes still further loss of O as we have shown for a variety of simple oxides, and (c) at the same time N+2 bombardment diminishes the SiSi or SiCr bonds with indication of partial replacement by SiN and to a lesser extent by CrN bonds. These results can be explained by the prominent role of thermodynamic driving forces.",
author = "I. Bert{\'o}ti and A. T{\'o}th and M. Mohai and R. Kelly and G. Marletta",
year = "1994",
month = "4",
day = "1",
doi = "10.1016/0040-6090(94)90428-6",
language = "English",
volume = "241",
pages = "211--217",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Effect of ion bombardment on CrSiO layers

T2 - an X-ray photoelectron spectroscopic study

AU - Bertóti, I.

AU - Tóth, A.

AU - Mohai, M.

AU - Kelly, R.

AU - Marletta, G.

PY - 1994/4/1

Y1 - 1994/4/1

N2 - The behavior of simple oxides bombarded by ions of noble gases is widely documented in connection with studies involving electron and ion spectroscopies and transmission electron microscopy, and also with ion-beam assisted layer deposition or removal. In the present work a new approach to the problem of beam-oxide interaction involving a complex oxide possessing two cations is outlined. Complex oxide provide an unusual opportunity to gain insight into beam-oxide interaction for the simple reason that the two or more types of cation compete in forming bonds. Specifically, the effects of bombardments by 1-4 keV argon and nitrogen ions are compared for r.f. sputter deposited homogeneous, amorphous CrSiO layers. It is established that (a) Ar+ bombardment causes loss of O with the simultaneous formation of Si0 states and SiCr bonds, (b) N+2 bombardment causes still further loss of O as we have shown for a variety of simple oxides, and (c) at the same time N+2 bombardment diminishes the SiSi or SiCr bonds with indication of partial replacement by SiN and to a lesser extent by CrN bonds. These results can be explained by the prominent role of thermodynamic driving forces.

AB - The behavior of simple oxides bombarded by ions of noble gases is widely documented in connection with studies involving electron and ion spectroscopies and transmission electron microscopy, and also with ion-beam assisted layer deposition or removal. In the present work a new approach to the problem of beam-oxide interaction involving a complex oxide possessing two cations is outlined. Complex oxide provide an unusual opportunity to gain insight into beam-oxide interaction for the simple reason that the two or more types of cation compete in forming bonds. Specifically, the effects of bombardments by 1-4 keV argon and nitrogen ions are compared for r.f. sputter deposited homogeneous, amorphous CrSiO layers. It is established that (a) Ar+ bombardment causes loss of O with the simultaneous formation of Si0 states and SiCr bonds, (b) N+2 bombardment causes still further loss of O as we have shown for a variety of simple oxides, and (c) at the same time N+2 bombardment diminishes the SiSi or SiCr bonds with indication of partial replacement by SiN and to a lesser extent by CrN bonds. These results can be explained by the prominent role of thermodynamic driving forces.

UR - http://www.scopus.com/inward/record.url?scp=0028419478&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028419478&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(94)90428-6

DO - 10.1016/0040-6090(94)90428-6

M3 - Article

VL - 241

SP - 211

EP - 217

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -