Effect of ion bombardment on CrSiO layers: an X-ray photoelectron spectroscopic study

I. Bertóti, A. Tóth, M. Mohai, R. Kelly, G. Marletta

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The behavior of simple oxides bombarded by ions of noble gases is widely documented in connection with studies involving electron and ion spectroscopies and transmission electron microscopy, and also with ion-beam assisted layer deposition or removal. In the present work a new approach to the problem of beam-oxide interaction involving a complex oxide possessing two cations is outlined. Complex oxide provide an unusual opportunity to gain insight into beam-oxide interaction for the simple reason that the two or more types of cation compete in forming bonds. Specifically, the effects of bombardments by 1-4 keV argon and nitrogen ions are compared for r.f. sputter deposited homogeneous, amorphous CrSiO layers. It is established that (a) Ar+ bombardment causes loss of O with the simultaneous formation of Si0 states and SiCr bonds, (b) N+2 bombardment causes still further loss of O as we have shown for a variety of simple oxides, and (c) at the same time N+2 bombardment diminishes the SiSi or SiCr bonds with indication of partial replacement by SiN and to a lesser extent by CrN bonds. These results can be explained by the prominent role of thermodynamic driving forces.

Original languageEnglish
Pages (from-to)211-217
Number of pages7
JournalThin Solid Films
Volume241
Issue number1-2
DOIs
Publication statusPublished - Apr 1 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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