Comparison of thermal annealing and ion mixing + thermal annealing on (100) GaAs-Au evaporated layers was made. The structures were investigated by SEM, X-ray diffraction, RBS + channeling and AES. Phase formation is retarded by ion implantation both for Ar and Xe, interdiffusion, however, is enhanced for Xe. Phases, as β-phase and GaAu2, were detected. An anomalous interdiffusion was found after low-dose Xe mixing, as gold penetration was deeper for 400°C post-annealing than for 500°C. Current-voltage characteristics of the diodes show that implantation procedure brings them nearer to ohmic behavior. Electrical measurements also point to a decrease of the number of defects as the annealing temperature increases up to 475°C in contrast to thermal annealing only .
ASJC Scopus subject areas
- Nuclear and High Energy Physics