Effect of ion beam treatment on thermal annealing of GaAs-Au layer structures

Erika Jároli, B. Pécz, J. Gyulai, M. Fried, L. Petrás, Éva Zsoldos, T. Lohner, I. Mojzes

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Comparison of thermal annealing and ion mixing + thermal annealing on (100) GaAs-Au evaporated layers was made. The structures were investigated by SEM, X-ray diffraction, RBS + channeling and AES. Phase formation is retarded by ion implantation both for Ar and Xe, interdiffusion, however, is enhanced for Xe. Phases, as β-phase and GaAu2, were detected. An anomalous interdiffusion was found after low-dose Xe mixing, as gold penetration was deeper for 400°C post-annealing than for 500°C. Current-voltage characteristics of the diodes show that implantation procedure brings them nearer to ohmic behavior. Electrical measurements also point to a decrease of the number of defects as the annealing temperature increases up to 475°C in contrast to thermal annealing only [1].

Original languageEnglish
Pages (from-to)767-772
Number of pages6
JournalNuclear Inst. and Methods in Physics Research, B
Volume19-20
Issue numberPART 2
DOIs
Publication statusPublished - 1987

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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