Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs schottky diodes

Z. Horváth, O. V. Rengevich, S. V. Mamykin, N. L. Dmitruk, Vo Van Tuyen, B. Szentpáli, R. V. Konakova, A. E. Belyaev

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The effect of the interface roughness and morphology (flat, dendrit-like and quasi-grating) on the electrical behaviour of Au/n-GaAs Schottky diodes were studied by current-voltage measurements. The results suggested that diodes with dendrit-like interface consist of two phases with different barrier heights, while the current flow through diodes with quasi-grating interface were dominated by tunneling. Both types of diodes with rough interface exhibited excess currents at low temperatures.

Original languageEnglish
Title of host publicationASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages257-259
Number of pages3
ISBN (Print)0780359399, 9780780359390
DOIs
Publication statusPublished - 2000
Event3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003 - Smolenice, Slovakia
Duration: Oct 16 2000Oct 18 2000

Other

Other3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003
CountrySlovakia
CitySmolenice
Period10/16/0010/18/00

ASJC Scopus subject areas

  • Engineering(all)

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    Horváth, Z., Rengevich, O. V., Mamykin, S. V., Dmitruk, N. L., Van Tuyen, V., Szentpáli, B., Konakova, R. V., & Belyaev, A. E. (2000). Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs schottky diodes. In ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems (pp. 257-259). [889495] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASDAM.2000.889495