Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs schottky diodes

Z. Horváth, O. V. Rengevich, S. V. Mamykin, N. L. Dmitruk, Vo Van Tuyen, B. Szentpáli, R. V. Konakova, A. E. Belyaev

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The effect of the interface roughness and morphology (flat, dendrit-like and quasi-grating) on the electrical behaviour of Au/n-GaAs Schottky diodes were studied by current-voltage measurements. The results suggested that diodes with dendrit-like interface consist of two phases with different barrier heights, while the current flow through diodes with quasi-grating interface were dominated by tunneling. Both types of diodes with rough interface exhibited excess currents at low temperatures.

Original languageEnglish
Title of host publicationASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages257-259
Number of pages3
ISBN (Print)0780359399, 9780780359390
DOIs
Publication statusPublished - 2000
Event3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003 - Smolenice, Slovakia
Duration: Oct 16 2000Oct 18 2000

Other

Other3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003
CountrySlovakia
CitySmolenice
Period10/16/0010/18/00

Fingerprint

Diodes
Surface roughness
Voltage measurement
Electric current measurement
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Horváth, Z., Rengevich, O. V., Mamykin, S. V., Dmitruk, N. L., Van Tuyen, V., Szentpáli, B., ... Belyaev, A. E. (2000). Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs schottky diodes. In ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems (pp. 257-259). [889495] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASDAM.2000.889495

Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs schottky diodes. / Horváth, Z.; Rengevich, O. V.; Mamykin, S. V.; Dmitruk, N. L.; Van Tuyen, Vo; Szentpáli, B.; Konakova, R. V.; Belyaev, A. E.

ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. Institute of Electrical and Electronics Engineers Inc., 2000. p. 257-259 889495.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horváth, Z, Rengevich, OV, Mamykin, SV, Dmitruk, NL, Van Tuyen, V, Szentpáli, B, Konakova, RV & Belyaev, AE 2000, Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs schottky diodes. in ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems., 889495, Institute of Electrical and Electronics Engineers Inc., pp. 257-259, 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003, Smolenice, Slovakia, 10/16/00. https://doi.org/10.1109/ASDAM.2000.889495
Horváth Z, Rengevich OV, Mamykin SV, Dmitruk NL, Van Tuyen V, Szentpáli B et al. Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs schottky diodes. In ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. Institute of Electrical and Electronics Engineers Inc. 2000. p. 257-259. 889495 https://doi.org/10.1109/ASDAM.2000.889495
Horváth, Z. ; Rengevich, O. V. ; Mamykin, S. V. ; Dmitruk, N. L. ; Van Tuyen, Vo ; Szentpáli, B. ; Konakova, R. V. ; Belyaev, A. E. / Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs schottky diodes. ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 257-259
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