Effect of hydrostatic pressure on crystallization and decomposition in amorphous Si/SiSb/Si system

Z. Papp, A. Csik, G. Erdélyi, G. A. Langer, D. L. Beke, L. Daróczi, A. Simon, K. Kapta

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The crystallization of amorphous SiSb mono-, Si/SiSb/Si tri- and Si/SiSb multilayers, carried out at 883K under different hydrostatic pressures has been investigated by cross-sectional transmission electron microscopy (TEM). After annealing crystallization of the amorphous SiSb layer was observed, while the pure Si layer remained amorphous. It was observed that hydrostatic pressure and the initial Sb concentration enhance crystallization and decomposition processes. In the case of the Si/SiSb/Si trilayer films, the nanocrystalline SiSb layer underwent a spinodal-like decomposition resulting in straight stripes parallel to the surface.

Original languageEnglish
Pages (from-to)273-277
Number of pages5
Issue number1-2 SPEC.
Publication statusPublished - May 9 2003



  • Amorphous SiSb
  • Crystallization
  • Hydrostatic pressure
  • Multilayer
  • Spinodal decomposition

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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