Effect of defect bands on the electrical characteristics of irradiated GaAs and Si

Z. Horváth, E. Gombia, D. Pal, Cs Kovacsics, G. Capannese, I. Pintér, M. Ádám, R. Mosca, Vo Van Tuyen, L. Dózsa

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Proton bombarded p-Si and neutron irradiated n-GaAs have been studied by DLTS, current-voltage, and capacitance-voltage measurements in metal-semiconductor junctions. The junctions were prepared by evaporation of Al onto silicon and of gold onto GaAs. Both junctions exhibited defect bands after bombardment. The bombardment has shifted the Fermi-level pinning position, increased the ideality factor in both junctions, and also affected the temperature dependence of the ideality factor and that of the capacitance. The results show that the main effect of the radiation is the generation of laterally inhomogeneous defects near the semiconductor surface.

Original languageEnglish
Pages (from-to)311-317
Number of pages7
JournalPhysica Status Solidi (A) Applied Research
Volume171
Issue number1
Publication statusPublished - 1999

Fingerprint

Semiconductor junctions
Defects
Deep level transient spectroscopy
Capacitance measurement
bombardment
Voltage measurement
defects
Silicon
Fermi level
capacitance
Gold
semiconductor junctions
Protons
Neutrons
Evaporation
Capacitance
Metals
Semiconductor materials
Radiation
electrical measurement

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Effect of defect bands on the electrical characteristics of irradiated GaAs and Si. / Horváth, Z.; Gombia, E.; Pal, D.; Kovacsics, Cs; Capannese, G.; Pintér, I.; Ádám, M.; Mosca, R.; Van Tuyen, Vo; Dózsa, L.

In: Physica Status Solidi (A) Applied Research, Vol. 171, No. 1, 1999, p. 311-317.

Research output: Contribution to journalArticle

Horváth, Z, Gombia, E, Pal, D, Kovacsics, C, Capannese, G, Pintér, I, Ádám, M, Mosca, R, Van Tuyen, V & Dózsa, L 1999, 'Effect of defect bands on the electrical characteristics of irradiated GaAs and Si', Physica Status Solidi (A) Applied Research, vol. 171, no. 1, pp. 311-317.
Horváth, Z. ; Gombia, E. ; Pal, D. ; Kovacsics, Cs ; Capannese, G. ; Pintér, I. ; Ádám, M. ; Mosca, R. ; Van Tuyen, Vo ; Dózsa, L. / Effect of defect bands on the electrical characteristics of irradiated GaAs and Si. In: Physica Status Solidi (A) Applied Research. 1999 ; Vol. 171, No. 1. pp. 311-317.
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AU - Capannese, G.

AU - Pintér, I.

AU - Ádám, M.

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AU - Van Tuyen, Vo

AU - Dózsa, L.

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