Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structures

Zs J. Horváth, L. K. Orlov, V. Rakovics, N. L. Ivina, A. L. Tóth, E. S. Demidov, F. Riesz, V. I. Vdovin, Z. Pászti

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The defects in InP epitaxial structures (containing in part Pt nanoparticles) and SiGe/Si heterostructures, and their electrical behaviour are studied. In InP structures pinholes, in SiGe/Si structures misfit dislocations were observed in the epitaxial layers. These defects yielded different anomalies of the electrical behaviour, as excess and leakage currents, instabilities, anomalous temperature dependence and anomalous apparent barrier height. It is shown that inspite of anomalies, the electrical measurements provide useful and reliable information about the structures.

Original languageEnglish
Pages (from-to)189-192
Number of pages4
JournalEPJ Applied Physics
Issue number1-3
Publication statusPublished - Jul 1 2004


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics

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