Effect of coadsorption of reducing gases on the conductivity of β-Ga2O3 thin films in the presence of O2

F. Réti, M. Fleischer, H. Meixner, J. Giber

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

The electrical conductivity of sputtered 2 μm thick films of the oxide semiconductor α-Ga2O3 was studied in function of the partial pressure of CO or H2 above the solid and also in the presence of CO+O2, H2+O2 and CO+H2 mixtures. The concentrations of the examined gases varied in the range 0.01-1 vol.% in nitrogen carrier gas, while the experiments were carried out at 823, 873 and 923 K. Under the influence of H2 and CO the conductivity of the samples increased with the partial pressures of the gases according to the relations: lg σ∼ (1/n)lgpco and lg σ∼(1/m)lgpH2, where n and m are greater than unity. As a second step the effect of coadsorption of CO+O2 and H2+O2 on the conductivity was investigated. The β-Ga2O3 sensors, connected electrically by Pt electrodes, manifested a moderate catalytic activity. Due to this property the conductivity of the solid changed steeply in the vicinity of the stoichiometric composition of the gas mixtures. In the third step the coadsorption of CO+H2 was studied. In function of the CO partial pressure the conductivity of the solid passed through a minimum. The shape of the experimental curves was attributed to the formation of certain organic intermediate surface compounds.

Original languageEnglish
Pages (from-to)573-577
Number of pages5
JournalSensors and Actuators, B: Chemical
Volume19
Issue number1-3
DOIs
Publication statusPublished - 1994

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Carbon Monoxide
Partial pressure
Gases
partial pressure
Thin films
conductivity
thin films
gases
Thick films
Gas mixtures
Catalyst activity
thick films
Nitrogen
gas mixtures
catalytic activity
unity
Electrodes
Sensors
Chemical analysis
nitrogen

ASJC Scopus subject areas

  • Analytical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Effect of coadsorption of reducing gases on the conductivity of β-Ga2O3 thin films in the presence of O2. / Réti, F.; Fleischer, M.; Meixner, H.; Giber, J.

In: Sensors and Actuators, B: Chemical, Vol. 19, No. 1-3, 1994, p. 573-577.

Research output: Contribution to journalArticle

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AB - The electrical conductivity of sputtered 2 μm thick films of the oxide semiconductor α-Ga2O3 was studied in function of the partial pressure of CO or H2 above the solid and also in the presence of CO+O2, H2+O2 and CO+H2 mixtures. The concentrations of the examined gases varied in the range 0.01-1 vol.% in nitrogen carrier gas, while the experiments were carried out at 823, 873 and 923 K. Under the influence of H2 and CO the conductivity of the samples increased with the partial pressures of the gases according to the relations: lg σ∼ (1/n)lgpco and lg σ∼(1/m)lgpH2, where n and m are greater than unity. As a second step the effect of coadsorption of CO+O2 and H2+O2 on the conductivity was investigated. The β-Ga2O3 sensors, connected electrically by Pt electrodes, manifested a moderate catalytic activity. Due to this property the conductivity of the solid changed steeply in the vicinity of the stoichiometric composition of the gas mixtures. In the third step the coadsorption of CO+H2 was studied. In function of the CO partial pressure the conductivity of the solid passed through a minimum. The shape of the experimental curves was attributed to the formation of certain organic intermediate surface compounds.

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