Effect of Ar+ irradiation on the behaviour of carbon nanotube transistor

Yun Sung Woo, Z. Osváth, G. Vértesy, L. Bíró, Siegmar Roth

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The characteristics of carbon nanotube field effect transistor are investigated after the whole device is irradiated with Ar+ ions. The resistance become much higher due to the electron scattering at vacancies produced by Ar- irradiation. In addition, the subthreshold slop, S, (dVG/d(log/D)) increases and the Schottky barrier height decreases after the irradiation, which imply the interface states generated within the band gap of the semiconducting single walled carbon nanotube. Therefore, we suggest a way that makes a transparent contact for electron transport by manipulating the vacancy formation at the interface between nanotube and metal leads.

Original languageEnglish
Pages (from-to)3390-3393
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume243
Issue number13
DOIs
Publication statusPublished - Nov 2006

Fingerprint

Carbon Nanotubes
Vacancies
Carbon nanotubes
Transistors
transistors
carbon nanotubes
Irradiation
Carbon nanotube field effect transistors
irradiation
Electron scattering
Interface states
Single-walled carbon nanotubes (SWCN)
Nanotubes
nanotubes
electron scattering
Energy gap
field effect transistors
Metals
Ions
ions

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Effect of Ar+ irradiation on the behaviour of carbon nanotube transistor. / Woo, Yun Sung; Osváth, Z.; Vértesy, G.; Bíró, L.; Roth, Siegmar.

In: Physica Status Solidi (B) Basic Research, Vol. 243, No. 13, 11.2006, p. 3390-3393.

Research output: Contribution to journalArticle

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