Effect of annealing on optical properties of thin films with β-FeSi2 quantum dots

N. Dmitruk, L. Dózsa, S. Mamykin, O. Kondratenko, G. Molnár

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Reactive deposition epitaxy was used to prepare β-FeSi2 nanodots on a Si(001) surface. The influence of annealing on optical properties has been studied. Annealing increases the particle size and decreases absorption. The indirect optical transition at 0.84-0.89 eV dominates the absorption spectra below 1.3-1.5 eV. The film with smaller nanoparticles exhibits higher absorption with direct optical transition energies in the 1.3-1.5 eV range. It suggests that direct transition is dominant only in small (around 3 nm diameter) β-FeSi2 nanodots. Larger particles are dominated by the indirect optical transition.

Original languageEnglish
Pages (from-to)238-242
Number of pages5
JournalVacuum
Volume84
Issue number1
DOIs
Publication statusPublished - Aug 25 2009

Fingerprint

Optical transitions
optical transition
Semiconductor quantum dots
Optical properties
quantum dots
Annealing
optical properties
Thin films
annealing
thin films
Epitaxial growth
epitaxy
Absorption spectra
Particle size
Nanoparticles
absorption spectra
nanoparticles
energy

Keywords

  • β-FeSi
  • Nanodots
  • Optical properties
  • Reactive deposition epitaxy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Instrumentation
  • Surfaces, Coatings and Films

Cite this

Effect of annealing on optical properties of thin films with β-FeSi2 quantum dots. / Dmitruk, N.; Dózsa, L.; Mamykin, S.; Kondratenko, O.; Molnár, G.

In: Vacuum, Vol. 84, No. 1, 25.08.2009, p. 238-242.

Research output: Contribution to journalArticle

Dmitruk, N. ; Dózsa, L. ; Mamykin, S. ; Kondratenko, O. ; Molnár, G. / Effect of annealing on optical properties of thin films with β-FeSi2 quantum dots. In: Vacuum. 2009 ; Vol. 84, No. 1. pp. 238-242.
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