Dynamical behaviour of the δ-doped Au/GaAs Schottky barrier

P. Hubík, L. Dózsa, P. Lipavský, J. Oswald, J. J. Mareš, J. Krištofik

Research output: Contribution to journalArticle

Abstract

Single δ(Si)-layers with donor concentration of 2 × 1016 m-2 embedded in GaAs are investigated by transport transient methods (deep level transient spectroscopy, admittance spectroscopy, fast defects transient technique) on time scales as short as 1 μs down to 4 K. An emission of electrons bound in the eigenstates of the δ-layer related quantum well is searched in response to a change of the bias on the Schottky barrier. No sign of a thermally activated process or even any well-defined transient that could be attributed to this emission is found. It is concluded that the process of sweeping electrons from the δ-layer is very fast and the results are briefly discussed.

Original languageEnglish
Pages (from-to)61-66
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Volume195
Issue number1 SPEC
DOIs
Publication statusPublished - Jan 2003

Fingerprint

Deep level transient spectroscopy
sweep frequency
Electrons
electrical impedance
Semiconductor quantum wells
spectroscopy
eigenvectors
quantum wells
Spectroscopy
Defects
defects
gallium arsenide
electrons

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Hubík, P., Dózsa, L., Lipavský, P., Oswald, J., Mareš, J. J., & Krištofik, J. (2003). Dynamical behaviour of the δ-doped Au/GaAs Schottky barrier. Physica Status Solidi (A) Applied Research, 195(1 SPEC), 61-66. https://doi.org/10.1002/pssa.200306272

Dynamical behaviour of the δ-doped Au/GaAs Schottky barrier. / Hubík, P.; Dózsa, L.; Lipavský, P.; Oswald, J.; Mareš, J. J.; Krištofik, J.

In: Physica Status Solidi (A) Applied Research, Vol. 195, No. 1 SPEC, 01.2003, p. 61-66.

Research output: Contribution to journalArticle

Hubík, P, Dózsa, L, Lipavský, P, Oswald, J, Mareš, JJ & Krištofik, J 2003, 'Dynamical behaviour of the δ-doped Au/GaAs Schottky barrier', Physica Status Solidi (A) Applied Research, vol. 195, no. 1 SPEC, pp. 61-66. https://doi.org/10.1002/pssa.200306272
Hubík, P. ; Dózsa, L. ; Lipavský, P. ; Oswald, J. ; Mareš, J. J. ; Krištofik, J. / Dynamical behaviour of the δ-doped Au/GaAs Schottky barrier. In: Physica Status Solidi (A) Applied Research. 2003 ; Vol. 195, No. 1 SPEC. pp. 61-66.
@article{a412261971f3446da08152200b63f4a5,
title = "Dynamical behaviour of the δ-doped Au/GaAs Schottky barrier",
abstract = "Single δ(Si)-layers with donor concentration of 2 × 1016 m-2 embedded in GaAs are investigated by transport transient methods (deep level transient spectroscopy, admittance spectroscopy, fast defects transient technique) on time scales as short as 1 μs down to 4 K. An emission of electrons bound in the eigenstates of the δ-layer related quantum well is searched in response to a change of the bias on the Schottky barrier. No sign of a thermally activated process or even any well-defined transient that could be attributed to this emission is found. It is concluded that the process of sweeping electrons from the δ-layer is very fast and the results are briefly discussed.",
author = "P. Hub{\'i}k and L. D{\'o}zsa and P. Lipavsk{\'y} and J. Oswald and Mareš, {J. J.} and J. Krištofik",
year = "2003",
month = "1",
doi = "10.1002/pssa.200306272",
language = "English",
volume = "195",
pages = "61--66",
journal = "Physica Status Solidi (A) Applied Research",
issn = "0031-8965",
publisher = "Wiley-VCH Verlag",
number = "1 SPEC",

}

TY - JOUR

T1 - Dynamical behaviour of the δ-doped Au/GaAs Schottky barrier

AU - Hubík, P.

AU - Dózsa, L.

AU - Lipavský, P.

AU - Oswald, J.

AU - Mareš, J. J.

AU - Krištofik, J.

PY - 2003/1

Y1 - 2003/1

N2 - Single δ(Si)-layers with donor concentration of 2 × 1016 m-2 embedded in GaAs are investigated by transport transient methods (deep level transient spectroscopy, admittance spectroscopy, fast defects transient technique) on time scales as short as 1 μs down to 4 K. An emission of electrons bound in the eigenstates of the δ-layer related quantum well is searched in response to a change of the bias on the Schottky barrier. No sign of a thermally activated process or even any well-defined transient that could be attributed to this emission is found. It is concluded that the process of sweeping electrons from the δ-layer is very fast and the results are briefly discussed.

AB - Single δ(Si)-layers with donor concentration of 2 × 1016 m-2 embedded in GaAs are investigated by transport transient methods (deep level transient spectroscopy, admittance spectroscopy, fast defects transient technique) on time scales as short as 1 μs down to 4 K. An emission of electrons bound in the eigenstates of the δ-layer related quantum well is searched in response to a change of the bias on the Schottky barrier. No sign of a thermally activated process or even any well-defined transient that could be attributed to this emission is found. It is concluded that the process of sweeping electrons from the δ-layer is very fast and the results are briefly discussed.

UR - http://www.scopus.com/inward/record.url?scp=0037274889&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037274889&partnerID=8YFLogxK

U2 - 10.1002/pssa.200306272

DO - 10.1002/pssa.200306272

M3 - Article

AN - SCOPUS:0037274889

VL - 195

SP - 61

EP - 66

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 1 SPEC

ER -