Dynamic annealing study of SiC epilayers implanted with Ni ions at different temperatures

J. García López, Y. Morilla, J. C. Cheang-Wong, G. Battistig, Z. Zolnai, J. L. Cantin

Research output: Contribution to journalArticle

Abstract

SiC epilayers grown on 4H-SiC single crystals were implanted with 850 keV Ni+ ions with fluences in the 0.5-9 × 1016 Ni+/cm2 range. Most of the samples were implanted at 450 °C, but for comparison some implantations were performed at room temperature (RT). In addition, a post-implantation annealing was performed in N2 at 1100 °C in order to recover the implantation-induced structural damage. The disorder produced by the implantation at 450 °C and the effect of the post-implantation annealing on the recrystallization of the substrates have been studied as a function of the fluence by Backscattering Spectrometry in channeling geometry (BS/C) with a 3.45 MeV He2+ beam. RT as-implanted samples showed a completely amorphous region which extends until the surface when irradiated with the highest dose, whereas in the case of 450 °C implantation amorphization does not occur. In general, partial recovery of the crystal lattice quality was found for the less damaged samples, and the dynamic recovery of the crystalline structure increases with the irradiation temperature.

Original languageEnglish
Pages (from-to)1097-1100
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume267
Issue number7
DOIs
Publication statusPublished - Apr 15 2009

Fingerprint

Epilayers
implantation
Annealing
annealing
Ions
Recovery
ions
Amorphization
Backscattering
Crystal lattices
Ion implantation
Temperature
Spectrometry
temperature
fluence
recovery
Irradiation
Single crystals
Crystalline materials
Geometry

Keywords

  • Ion implantation
  • Magnetic semiconductors
  • RBS channeling
  • SiC

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

Cite this

Dynamic annealing study of SiC epilayers implanted with Ni ions at different temperatures. / García López, J.; Morilla, Y.; Cheang-Wong, J. C.; Battistig, G.; Zolnai, Z.; Cantin, J. L.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 267, No. 7, 15.04.2009, p. 1097-1100.

Research output: Contribution to journalArticle

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AU - Cheang-Wong, J. C.

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AU - Zolnai, Z.

AU - Cantin, J. L.

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