DOPPEL-HETERO-STRUKTURLASER FUER OPTISCHE NACHRICHTENUEBERTRAGUNG.

Translated title of the contribution: Double Heterostructure Lasers for Optical Communications Systems.

D. Pawlik, H. Meixner

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

An account is given of the fabrication, mesa structure and properties of DHS semiconductor GaAs injection lasers. Mesa type and strip geometry lasers are prepared from appropriate heteroepitaxial film structures. The large-area contact obtained with strip geometry improves the transfer of heat from the active region. A diamond heat sink which makes it possible to range from pulsed operation to very near to cw opewration is described. Methods of measurements and data relating to the realized thermal resistances are given.

Original languageGerman
Title of host publicationSiemens Forsch Entwicklungsber, Res Dev Rep
Pages210-217
Number of pages8
Volume2
Edition4
Publication statusPublished - 1973

Fingerprint

Optical communication
Heterojunctions
Communication systems
Injection lasers
Geometry
Lasers
Heat sinks
Heat resistance
Diamonds
Semiconductor materials
Fabrication
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Pawlik, D., & Meixner, H. (1973). DOPPEL-HETERO-STRUKTURLASER FUER OPTISCHE NACHRICHTENUEBERTRAGUNG. In Siemens Forsch Entwicklungsber, Res Dev Rep (4 ed., Vol. 2, pp. 210-217)

DOPPEL-HETERO-STRUKTURLASER FUER OPTISCHE NACHRICHTENUEBERTRAGUNG. / Pawlik, D.; Meixner, H.

Siemens Forsch Entwicklungsber, Res Dev Rep. Vol. 2 4. ed. 1973. p. 210-217.

Research output: Chapter in Book/Report/Conference proceedingChapter

Pawlik, D & Meixner, H 1973, DOPPEL-HETERO-STRUKTURLASER FUER OPTISCHE NACHRICHTENUEBERTRAGUNG. in Siemens Forsch Entwicklungsber, Res Dev Rep. 4 edn, vol. 2, pp. 210-217.
Pawlik D, Meixner H. DOPPEL-HETERO-STRUKTURLASER FUER OPTISCHE NACHRICHTENUEBERTRAGUNG. In Siemens Forsch Entwicklungsber, Res Dev Rep. 4 ed. Vol. 2. 1973. p. 210-217
Pawlik, D. ; Meixner, H. / DOPPEL-HETERO-STRUKTURLASER FUER OPTISCHE NACHRICHTENUEBERTRAGUNG. Siemens Forsch Entwicklungsber, Res Dev Rep. Vol. 2 4. ed. 1973. pp. 210-217
@inbook{6b1b7c0bf8dc452cb164aaaca4da7623,
title = "DOPPEL-HETERO-STRUKTURLASER FUER OPTISCHE NACHRICHTENUEBERTRAGUNG.",
abstract = "An account is given of the fabrication, mesa structure and properties of DHS semiconductor GaAs injection lasers. Mesa type and strip geometry lasers are prepared from appropriate heteroepitaxial film structures. The large-area contact obtained with strip geometry improves the transfer of heat from the active region. A diamond heat sink which makes it possible to range from pulsed operation to very near to cw opewration is described. Methods of measurements and data relating to the realized thermal resistances are given.",
author = "D. Pawlik and H. Meixner",
year = "1973",
language = "German",
volume = "2",
pages = "210--217",
booktitle = "Siemens Forsch Entwicklungsber, Res Dev Rep",
edition = "4",

}

TY - CHAP

T1 - DOPPEL-HETERO-STRUKTURLASER FUER OPTISCHE NACHRICHTENUEBERTRAGUNG.

AU - Pawlik, D.

AU - Meixner, H.

PY - 1973

Y1 - 1973

N2 - An account is given of the fabrication, mesa structure and properties of DHS semiconductor GaAs injection lasers. Mesa type and strip geometry lasers are prepared from appropriate heteroepitaxial film structures. The large-area contact obtained with strip geometry improves the transfer of heat from the active region. A diamond heat sink which makes it possible to range from pulsed operation to very near to cw opewration is described. Methods of measurements and data relating to the realized thermal resistances are given.

AB - An account is given of the fabrication, mesa structure and properties of DHS semiconductor GaAs injection lasers. Mesa type and strip geometry lasers are prepared from appropriate heteroepitaxial film structures. The large-area contact obtained with strip geometry improves the transfer of heat from the active region. A diamond heat sink which makes it possible to range from pulsed operation to very near to cw opewration is described. Methods of measurements and data relating to the realized thermal resistances are given.

UR - http://www.scopus.com/inward/record.url?scp=0015570188&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0015570188&partnerID=8YFLogxK

M3 - Chapter

VL - 2

SP - 210

EP - 217

BT - Siemens Forsch Entwicklungsber, Res Dev Rep

ER -