Double 1s shell ionization of Si induced in collisions with 1-3-MeV protons

M. Kavčič, K. Tökési

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The double 1s ionization of Si induced in collisions with protons was studied by measuring the K x-ray emission of a solid Si target ionized by the impact of 1-3-MeV protons. In order to resolve the hypersatellite contributions corresponding to the radiative decay of the double 1s vacancy state, a high-resolution crystal spectrometer was employed yielding sub-eV energy resolution. From the intensity of the measured hypersatellite lines double 1s ionization cross sections for the studied collisions were determined. Experimental values were compared with the theoretical ones obtained within the independent electron framework employing single electron ionization probabilities calculated with the semiclassical approach. This comparison suggests a sequential two step model for the double 1s ionization which was additionally confirmed by four body classical trajectory Monte Carlo calculations.

Original languageEnglish
Article number062704
JournalPhysical Review A
Volume72
Issue number6
DOIs
Publication statusPublished - 2005

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ionization
collisions
protons
ionization cross sections
trajectories
spectrometers
high resolution
decay
crystals
electrons
x rays
energy

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy(all)

Cite this

Double 1s shell ionization of Si induced in collisions with 1-3-MeV protons. / Kavčič, M.; Tökési, K.

In: Physical Review A, Vol. 72, No. 6, 062704, 2005.

Research output: Contribution to journalArticle

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