Dose rate and temperature dependence of ion-beam-induced defect evolution in Si and SiC

M. Posselt, L. Bischoff, J. Teichert, A. Ster

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A focused ion beam system is applied to investigate the dose dependence of the shape of Ge channeling implantation profiles in Si and SiC at two very different dose rates (1011 and 1018 cm-2 s-1), and for implantation temperatures between room temperature and 580 °C. The competing influence of dose rate and temperature observed is explained in terms of intracascade defect relaxation. For the different implantation temperatures, the time scale for defect reduction is estimated. The results obtained for Si are compared with those for SiC.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS Ashok, J Chevallier, N.M. Johnson, B.L. Sopori, H Okushi
Pages311-317
Number of pages7
Volume719
Publication statusPublished - 2002
EventDefect and Impunity Engineered Semiconductors and Devices III - San Francisco, CA, United States
Duration: Apr 1 2002Apr 5 2002

Other

OtherDefect and Impunity Engineered Semiconductors and Devices III
CountryUnited States
CitySan Francisco, CA
Period4/1/024/5/02

Fingerprint

Ion beams
Defects
Temperature
Focused ion beams
Ion implantation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Posselt, M., Bischoff, L., Teichert, J., & Ster, A. (2002). Dose rate and temperature dependence of ion-beam-induced defect evolution in Si and SiC. In S. Ashok, J. Chevallier, N. M. Johnson, B. L. Sopori, & H. Okushi (Eds.), Materials Research Society Symposium - Proceedings (Vol. 719, pp. 311-317)

Dose rate and temperature dependence of ion-beam-induced defect evolution in Si and SiC. / Posselt, M.; Bischoff, L.; Teichert, J.; Ster, A.

Materials Research Society Symposium - Proceedings. ed. / S Ashok; J Chevallier; N.M. Johnson; B.L. Sopori; H Okushi. Vol. 719 2002. p. 311-317.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Posselt, M, Bischoff, L, Teichert, J & Ster, A 2002, Dose rate and temperature dependence of ion-beam-induced defect evolution in Si and SiC. in S Ashok, J Chevallier, NM Johnson, BL Sopori & H Okushi (eds), Materials Research Society Symposium - Proceedings. vol. 719, pp. 311-317, Defect and Impunity Engineered Semiconductors and Devices III, San Francisco, CA, United States, 4/1/02.
Posselt M, Bischoff L, Teichert J, Ster A. Dose rate and temperature dependence of ion-beam-induced defect evolution in Si and SiC. In Ashok S, Chevallier J, Johnson NM, Sopori BL, Okushi H, editors, Materials Research Society Symposium - Proceedings. Vol. 719. 2002. p. 311-317
Posselt, M. ; Bischoff, L. ; Teichert, J. ; Ster, A. / Dose rate and temperature dependence of ion-beam-induced defect evolution in Si and SiC. Materials Research Society Symposium - Proceedings. editor / S Ashok ; J Chevallier ; N.M. Johnson ; B.L. Sopori ; H Okushi. Vol. 719 2002. pp. 311-317
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